Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

E.I. Moiseev, N.V. Kryzhanovskaya, M.V. Maximov, A.M. Mozharov, A.S. Gudovskikh, A.S. Polushkin, I.S. Mukhin, Yu A. Guseva, M. M. Kulagina, S. I. Troshokov, T. Niemi, R. Isoaho, M. Guina, A.E. Zhukov

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    Abstract

    Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.
    Original languageEnglish
    Article number052002
    Number of pages3
    JournalJournal of Physics: Conference Series
    Volume917
    Issue number5
    DOIs
    Publication statusPublished - Nov 2017
    Publication typeA1 Journal article-refereed

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    • Publication forum level 1

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