Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE

Joonas Hilska; Eero Koivusalo; Janne Puustinen; Soile Suomalainen; Mircea Guina

Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE

Joonas Hilska, Eero Koivusalo, Janne Puustinen, Soile Suomalainen, Mircea Guina

Research output: Other conference contribution › Abstract › Scientific

Abstract

We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.

Original language	English
Publication status	Published - 5 Sept 2018
Event	ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy - Shanghai, China Duration: 2 Sept 2018 → 7 Sept 2018 http://mbe2018.csp.escience.cn/dct/page/1

Conference

Conference	ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy
Country/Territory	China
City	Shanghai
Period	2/09/18 → 7/09/18
Internet address	http://mbe2018.csp.escience.cn/dct/page/1

Keywords

Epitaxy
Bismides
III-V semiconductors
GaSbBi

Cite this

@conference{53ec1858c29345a0a34256fd984a3f77,

title = "Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE",

abstract = "We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.",

keywords = "Epitaxy, Bismides, III-V semiconductors, GaSbBi",

author = "Joonas Hilska and Eero Koivusalo and Janne Puustinen and Soile Suomalainen and Mircea Guina",

year = "2018",

month = sep,

day = "5",

language = "English",

note = "ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy ; Conference date: 02-09-2018 Through 07-09-2018",

url = "http://mbe2018.csp.escience.cn/dct/page/1",

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TY - CONF

T1 - Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE

AU - Hilska, Joonas

AU - Koivusalo, Eero

AU - Puustinen, Janne

AU - Suomalainen, Soile

AU - Guina, Mircea

PY - 2018/9/5

Y1 - 2018/9/5

N2 - We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.

AB - We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.

KW - Epitaxy

KW - Bismides

KW - III-V semiconductors

KW - GaSbBi

M3 - Abstract

T2 - ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy

Y2 - 2 September 2018 through 7 September 2018

ER -

Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE

Abstract

Conference

Keywords

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