Abstract
We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.
Original language | English |
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Publication status | Published - 5 Sept 2018 |
Event | ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy - Shanghai, China Duration: 2 Sept 2018 → 7 Sept 2018 http://mbe2018.csp.escience.cn/dct/page/1 |
Conference
Conference | ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy |
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Country/Territory | China |
City | Shanghai |
Period | 2/09/18 → 7/09/18 |
Internet address |
Keywords
- Epitaxy
- Bismides
- III-V semiconductors
- GaSbBi