We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.
|Publication status||Published - 5 Sep 2018|
|Event||ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy - Shanghai, China|
Duration: 2 Sep 2018 → 7 Sep 2018
|Conference||ICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy|
|Period||2/09/18 → 7/09/18|
- III-V semiconductors