Lasing action in low-resistance nanolasers based on tunnel junctions

Cheng-Yi Fang, Si Hui Pan, Felipe Vallini, Antti Tukiainen, Jari Lyytikäinen, Gustav Nylund, Boubacar Kanté, Mircea Guina, Abdelkrim El Amili, Yeshaiahu Fainman

Research output: Contribution to journalLetterScientificpeer-review

4 Citations (Scopus)


We experimentally demonstrate the lasing action of a new nanolaser design with a tunnel junction. By using a heavily doped tunnel junction for hole injection, we can replace the p-type contact material of a conventional nanolaser diode with a low-resistance n-type contact layer. This leads to a significant reduction of the device resistance and lowers the threshold voltage from 5 V to around 0.95 V at 77 K. The lasing behavior is verified by the light output versus the injection current (L-I) characterization and second-order coherence function measurements. Because of less Joule heating during current injection, the nanolaser can be operated at temperatures as high as 180 K under CW pumping. The incorporation of heavily doped tunnel junctions may pave the way for other nanoscale cavity design for improved heat management.
Original languageEnglish
Pages (from-to)3669-3672
Number of pages4
JournalOptics Letters
Issue number15
Publication statusPublished - 2019
Publication typeA1 Journal article-refereed

Publication forum classification

  • Publication forum level 2

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Engineering


Dive into the research topics of 'Lasing action in low-resistance nanolasers based on tunnel junctions'. Together they form a unique fingerprint.

Cite this