Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate

Hao Zeng; Yongfa Kong; Hongde Liu; Shaolin Chen; Ziheng Huang; Xinyu Ge; Jingjun Xu

doi:10.1063/1.3359721

Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate

Hao Zeng, Yongfa Kong, Hongde Liu, Shaolin Chen, Ziheng Huang, Xinyu Ge, Jingjun Xu

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Abstract

Light-induced domain reversal of near-stoichiometric Mg-doped LiNbO(3) crystal was investigated with a focused 532 nm continuous laser beam. The lowest electric field applied to accomplish domain nucleation is only 30 V/mm and 1/80 of the coercive field, which is safe and convenient for us to fabricate domain structures. Under this superlow applied field, the pinning effect of domain wall is so obvious that the inverted domain reveals a gear shape contrary to the hexagon in a higher applied field. Then two-dimensional domain patterns with the smallest domain size of 4 mu m have been fabricated.

Original language	English
Article number	063514
Number of pages	4
Journal	Journal of Applied Physics
Volume	107
Issue number	6
DOIs	https://doi.org/10.1063/1.3359721
Publication status	Published - 15 Mar 2010
Externally published	Yes
Publication type	A1 Journal article-refereed

Keywords

electric domain walls
ferroelectric materials
laser beam effects
lithium compounds
magnesium
nucleation
LINBO3
INVERSION
DEFECTS
WALL

Access to Document

10.1063/1.3359721

Cite this

@article{193387ca79e74dfe90ff9665bd5c5b31,

title = "Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate",

abstract = "Light-induced domain reversal of near-stoichiometric Mg-doped LiNbO(3) crystal was investigated with a focused 532 nm continuous laser beam. The lowest electric field applied to accomplish domain nucleation is only 30 V/mm and 1/80 of the coercive field, which is safe and convenient for us to fabricate domain structures. Under this superlow applied field, the pinning effect of domain wall is so obvious that the inverted domain reveals a gear shape contrary to the hexagon in a higher applied field. Then two-dimensional domain patterns with the smallest domain size of 4 mu m have been fabricated.",

keywords = "electric domain walls, ferroelectric materials, laser beam effects, lithium compounds, magnesium, nucleation, LINBO3, INVERSION, DEFECTS, WALL",

author = "Hao Zeng and Yongfa Kong and Hongde Liu and Shaolin Chen and Ziheng Huang and Xinyu Ge and Jingjun Xu",

year = "2010",

month = mar,

day = "15",

doi = "10.1063/1.3359721",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate

AU - Zeng, Hao

AU - Kong, Yongfa

AU - Liu, Hongde

AU - Chen, Shaolin

AU - Huang, Ziheng

AU - Ge, Xinyu

AU - Xu, Jingjun

PY - 2010/3/15

Y1 - 2010/3/15

N2 - Light-induced domain reversal of near-stoichiometric Mg-doped LiNbO(3) crystal was investigated with a focused 532 nm continuous laser beam. The lowest electric field applied to accomplish domain nucleation is only 30 V/mm and 1/80 of the coercive field, which is safe and convenient for us to fabricate domain structures. Under this superlow applied field, the pinning effect of domain wall is so obvious that the inverted domain reveals a gear shape contrary to the hexagon in a higher applied field. Then two-dimensional domain patterns with the smallest domain size of 4 mu m have been fabricated.

AB - Light-induced domain reversal of near-stoichiometric Mg-doped LiNbO(3) crystal was investigated with a focused 532 nm continuous laser beam. The lowest electric field applied to accomplish domain nucleation is only 30 V/mm and 1/80 of the coercive field, which is safe and convenient for us to fabricate domain structures. Under this superlow applied field, the pinning effect of domain wall is so obvious that the inverted domain reveals a gear shape contrary to the hexagon in a higher applied field. Then two-dimensional domain patterns with the smallest domain size of 4 mu m have been fabricated.

KW - electric domain walls

KW - ferroelectric materials

KW - laser beam effects

KW - lithium compounds

KW - magnesium

KW - nucleation

KW - LINBO3

KW - INVERSION

KW - DEFECTS

KW - WALL

U2 - 10.1063/1.3359721

DO - 10.1063/1.3359721

M3 - Article

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063514

ER -

Light-induced superlow electric field for domain reversal in near-stoichiometric magnesium-doped lithium niobate

Abstract

Keywords

Access to Document

Fingerprint

Cite this