TY - GEN
T1 - Light sensitive polymer thin film transistors based on BAS-PPE
AU - Xu, Yifan
AU - Berger, Paul R.
AU - Wilson, James N.
AU - Bunz, Uwe H.F.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2004
Y1 - 2004
N2 - The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.
AB - The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.
U2 - 10.1557/proc-814-i13.7
DO - 10.1557/proc-814-i13.7
M3 - Conference contribution
AN - SCOPUS:12844285618
T3 - Materials Research Society Symposium Proceedings
SP - 152
EP - 156
BT - Flexible Electronics 2004
PB - Materials Research Society
T2 - Flexible Electronics 2004 - Materials and Device Technology
Y2 - 13 April 2004 through 16 April 2004
ER -