Light sensitive polymer thin film transistors based on BAS-PPE

Yifan Xu; Paul R. Berger; James N. Wilson; Uwe H.F. Bunz

doi:10.1557/proc-814-i13.7

Light sensitive polymer thin film transistors based on BAS-PPE

Yifan Xu, Paul R. Berger, James N. Wilson, Uwe H.F. Bunz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Abstract

The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of V_DS demonstrates that I_DS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of V_DS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

Original language	English
Title of host publication	Flexible Electronics 2004
Subtitle of host publication	Materials and Device Technology
Publisher	Materials Research Society
Pages	152–156
Number of pages	5
DOIs	https://doi.org/10.1557/proc-814-i13.7
Publication status	Published - 2004
Externally published	Yes
Publication type	A4 Article in conference proceedings
Event	Flexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States Duration: 13 Apr 2004 → 16 Apr 2004

Publication series

Name	Materials Research Society Symposium Proceedings
Publisher	Materials Research Society
Volume	814
ISSN (Print)	0272-9172
ISSN (Electronic)	1946-4274

Conference

Conference	Flexible Electronics 2004 - Materials and Device Technology
Country/Territory	United States
City	San Francisco, CA
Period	13/04/04 → 16/04/04

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-814-i13.7

Cite this

@inproceedings{cd411b09e19742bb9f568c107b2b3ed1,

title = "Light sensitive polymer thin film transistors based on BAS-PPE",

abstract = "The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.",

author = "Yifan Xu and Berger, {Paul R.} and Wilson, {James N.} and Bunz, {Uwe H.F.}",

year = "2004",

doi = "10.1557/proc-814-i13.7",

language = "English",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "152–156",

booktitle = "Flexible Electronics 2004",

address = "United States",

}

Xu, Y, Berger, PR, Wilson, JN & Bunz, UHF 2004, Light sensitive polymer thin film transistors based on BAS-PPE. in Flexible Electronics 2004: Materials and Device Technology. Materials Research Society Symposium Proceedings, vol. 814, Materials Research Society, pp. 152–156, Flexible Electronics 2004 - Materials and Device Technology, San Francisco, CA, United States, 13/04/04. https://doi.org/10.1557/proc-814-i13.7

Light sensitive polymer thin film transistors based on BAS-PPE. / Xu, Yifan; Berger, Paul R.; Wilson, James N. et al.

Flexible Electronics 2004: Materials and Device Technology. Materials Research Society, 2004. p. 152–156 (Materials Research Society Symposium Proceedings; Vol. 814).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Light sensitive polymer thin film transistors based on BAS-PPE

AU - Xu, Yifan

AU - Berger, Paul R.

AU - Wilson, James N.

AU - Bunz, Uwe H.F.

PY - 2004

Y1 - 2004

N2 - The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

AB - The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

U2 - 10.1557/proc-814-i13.7

DO - 10.1557/proc-814-i13.7

M3 - Conference contribution

AN - SCOPUS:12844285618

T3 - Materials Research Society Symposium Proceedings

SP - 152

EP - 156

BT - Flexible Electronics 2004

PB - Materials Research Society

T2 - Flexible Electronics 2004 - Materials and Device Technology

Y2 - 13 April 2004 through 16 April 2004

ER -

Light sensitive polymer thin film transistors based on BAS-PPE

Abstract

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Conference

ASJC Scopus subject areas

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