Light sensitive polymer thin film transistors based on BAS-PPE

Yifan Xu, Paul R. Berger, James N. Wilson, Uwe H.F. Bunz

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

The photoresponse of polymer field effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-l,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl) benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo-generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

Original languageEnglish
Title of host publicationFlexible Electronics 2004
Subtitle of host publicationMaterials and Device Technology
PublisherMaterials Research Society
Pages152–156
Number of pages5
DOIs
Publication statusPublished - 2004
Externally publishedYes
Publication typeA4 Article in a conference publication
EventFlexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States
Duration: 13 Apr 200416 Apr 2004

Publication series

NameMaterials Research Society Symposium Proceedings
PublisherMaterials Research Society
Volume814
ISSN (Print)0272-9172
ISSN (Electronic)1946-4274

Conference

ConferenceFlexible Electronics 2004 - Materials and Device Technology
Country/TerritoryUnited States
CitySan Francisco, CA
Period13/04/0416/04/04

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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