Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment

Wei Gao, Paul R. Berger, Robert G. Hunsperger, Jagadeesh Pamulapati, Richard T. Lareau

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

We will present high quality In0.53Ga0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.

Original languageEnglish
Title of host publicationProceedings, Photodetectors: Materials and Devices
Pages171-177
Number of pages7
Volume2685
DOIs
Publication statusPublished - 1996
Externally publishedYes
Publication typeA4 Article in conference proceedings
EventPhotonics West - , United States
Duration: 1 Jan 1996 → …

Conference

ConferencePhotonics West
Country/TerritoryUnited States
Period1/01/96 → …

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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