Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment

Wei Gao; Paul R. Berger; Robert G. Hunsperger; Jagadeesh Pamulapati; Richard T. Lareau

doi:10.1117/12.237703

Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment

Wei Gao, Paul R. Berger, Robert G. Hunsperger, Jagadeesh Pamulapati, Richard T. Lareau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Abstract

We will present high quality In_0.53Ga_0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.

Original language	English
Title of host publication	Proceedings, Photodetectors: Materials and Devices
Pages	171-177
Number of pages	7
Volume	2685
DOIs	https://doi.org/10.1117/12.237703
Publication status	Published - 1996
Externally published	Yes
Publication type	A4 Article in conference proceedings
Event	Photonics West - , United States Duration: 1 Jan 1996 → …

Conference

Conference	Photonics West
Country/Territory	United States
Period	1/01/96 → …

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.237703

Cite this

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title = "Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment",

abstract = "We will present high quality In0.53Ga0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.",

author = "Wei Gao and Berger, {Paul R.} and Hunsperger, {Robert G.} and Jagadeesh Pamulapati and Lareau, {Richard T.}",

year = "1996",

doi = "10.1117/12.237703",

language = "English",

isbn = "081942059X",

volume = "2685",

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AU - Berger, Paul R.

AU - Hunsperger, Robert G.

AU - Pamulapati, Jagadeesh

AU - Lareau, Richard T.

PY - 1996

Y1 - 1996

N2 - We will present high quality In0.53Ga0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.

AB - We will present high quality In0.53Ga0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.

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U2 - 10.1117/12.237703

DO - 10.1117/12.237703

M3 - Conference contribution

AN - SCOPUS:0029722308

SN - 081942059X

SN - 9780819420596

VL - 2685

SP - 171

EP - 177

BT - Proceedings, Photodetectors: Materials and Devices

T2 - Photonics West

Y2 - 1 January 1996

ER -

Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment

Abstract

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ASJC Scopus subject areas

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