Liquid phase epitaxial InGaAs on InP with rare-earth elements

Wei Gao, Paul R. Berger, Robert G. Hunsperger, Jagadeesh Pamulapati

Research output: Contribution to journalConference articleScientificpeer-review


High quality In0.53Ga0.47As is grown on semi-insulating (100) InP:Fe substrates. The growths are performed with rare-earth dope liquid phase epitaxial (LPE) growth melts in a graphite boat. Hall measurements show improved electron mobility and reduced (n-type) carrier concentration. Photoluminescence (PL) shows rare-earth doped layer have a higher PL efficiency with narrower linewidths that undoped layers. However, two deep levels are created by the rare earth elements. These results confirm previous reports that rare-earth elements added to the LPE growth melt can actually lower the level of impurities within the epitaxial layer.

Original languageEnglish
Pages (from-to)87-88
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Publication statusPublished - 1995
Externally publishedYes
Publication typeA1 Journal article-refereed
EventProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
Duration: 30 Oct 19952 Nov 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Liquid phase epitaxial InGaAs on InP with rare-earth elements'. Together they form a unique fingerprint.

Cite this