Translated title of the contribution | Low-Threshold 1.3 um Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy |
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Original language | English |
Pages (from-to) | L634-L636 |
Journal | Jpn.J.Appl.Phys |
Volume | 35 |
Issue number | 5B |
Publication status | Published - 1996 |
Publication type | A1 Journal article-refereed |
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