Low-Threshold 1.3 um Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

M. Toivonen, P. Savolainen, H. Asonen, R. Murison

    Research output: Contribution to journalArticleScientificpeer-review

    Translated title of the contributionLow-Threshold 1.3 um Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy
    Original languageEnglish
    Pages (from-to)L634-L636
    JournalJpn.J.Appl.Phys
    Volume35
    Issue number5B
    Publication statusPublished - 1996
    Publication typeA1 Journal article-refereed

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