Low-Threshold 1.3 um Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

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Translated title of the contribution	Low-Threshold 1.3 um Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy
Original language	English
Pages (from-to)	L634-L636
Journal	Japanese Journal of Applied Physics
Volume	35
Issue number	5B
Publication status	Published - 1996
Publication type	A1 Journal article-refereed

Publication forum classification

@article{3943e98e95bb47e684f63ce5691b7d40,

title = "Low-Threshold 1.3 um Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy",

author = "M. Toivonen and P. Savolainen and H. Asonen and R. Murison",

note = "Contribution: organisation=fys,FACT1=1",

year = "1996",

language = "English",

volume = "35",

pages = "L634--L636",

journal = "Japanese Journal of Applied Physics",

issn = "1347-4065",

publisher = "Institute of Physics Publishing",

number = "5B",

}

TY - JOUR

T1 - Low-Threshold 1.3 um Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy

AU - Toivonen, M.

AU - Savolainen, P.

AU - Asonen, H.

AU - Murison, R.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1996

Y1 - 1996

M3 - Article

SN - 1347-4065

VL - 35

SP - L634-L636

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5B

ER -