Low-threshold aluminium free 808 nm lasers grown by solid source molecular beam epitaxy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific

Translated title of the contribution	Low-threshold aluminium free 808 nm lasers grown by solid source molecular beam epitaxy
Original language	English
Title of host publication	1997 International Conference on Indium Phosphide and Related Materials, Hyannis, USA, 11-15 May 1997, Conference Proceedings
Place of Publication	USA
Pages	44-46
Publication status	Published - 1997
Publication type	B3 Article in conference proceedings

Publication forum classification

@inproceedings{fe2894f6ff664750859be5065d7a7661,

title = "Low-threshold aluminium free 808 nm lasers grown by solid source molecular beam epitaxy",

author = "P. Savolainen and M. Toivonen and M. Jalonen and H. Asonen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1997",

language = "English",

pages = "44--46",

booktitle = "1997 International Conference on Indium Phosphide and Related Materials, Hyannis, USA, 11-15 May 1997, Conference Proceedings",

}

Low-threshold aluminium free 808 nm lasers grown by solid source molecular beam epitaxy. / Savolainen, P.; Toivonen, M.; Jalonen, M. et al.
1997 International Conference on Indium Phosphide and Related Materials, Hyannis, USA, 11-15 May 1997, Conference Proceedings. USA, 1997. p. 44-46.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific

TY - GEN

T1 - Low-threshold aluminium free 808 nm lasers grown by solid source molecular beam epitaxy

AU - Savolainen, P.

AU - Toivonen, M.

AU - Jalonen, M.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1997

Y1 - 1997

M3 - Conference contribution

SP - 44

EP - 46

BT - 1997 International Conference on Indium Phosphide and Related Materials, Hyannis, USA, 11-15 May 1997, Conference Proceedings

CY - USA

ER -