Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cells

Amr Ghazy; Muhammad Safdar; Mika Lastusaari; Arto Aho; Antti Tukiainen; Hele Savin; Mircea Guina; Maarit Karppinen

doi:10.1016/j.solmat.2020.110787

Luminescent (Er,Ho)₂O₃ thin films by ALD to enhance the performance of silicon solar cells

Amr Ghazy, Muhammad Safdar, Mika Lastusaari, Arto Aho, Antti Tukiainen, Hele Savin, Mircea Guina, Maarit Karppinen

Physics

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

15 Downloads (Pure)

Abstract

We have fabricated luminescent (Er,Ho)₂O₃ thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm⁻²) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.

Original language	English
Article number	110787
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	219
Early online date	2020
DOIs	https://doi.org/10.1016/j.solmat.2020.110787
Publication status	Published - 2021
Publication type	A1 Journal article-refereed

Keywords

Atomic layer deposition
c-Si solar cell
Luminescence
Photonics
Upconversion

Publication forum classification

Publication forum level 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2020.110787

Luminescent_Er_Ho_2O3_thin_filmsAccepted author manuscript, 359 KBLicence: CC BY-NC-ND

https://urn.fi/URN:NBN:fi:tuni-202112209402Licence: CC BY-NC-ND

Cite this

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title = "Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cells",

abstract = "We have fabricated luminescent (Er,Ho)2O3 thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm−2) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.",

keywords = "Atomic layer deposition, c-Si solar cell, Luminescence, Photonics, Upconversion",

author = "Amr Ghazy and Muhammad Safdar and Mika Lastusaari and Arto Aho and Antti Tukiainen and Hele Savin and Mircea Guina and Maarit Karppinen",

year = "2021",

doi = "10.1016/j.solmat.2020.110787",

language = "English",

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journal = "Solar Energy Materials and Solar Cells",

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T1 - Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cells

AU - Ghazy, Amr

AU - Safdar, Muhammad

AU - Lastusaari, Mika

AU - Aho, Arto

AU - Tukiainen, Antti

AU - Savin, Hele

AU - Guina, Mircea

AU - Karppinen, Maarit

PY - 2021

Y1 - 2021

N2 - We have fabricated luminescent (Er,Ho)2O3 thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm−2) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.

AB - We have fabricated luminescent (Er,Ho)2O3 thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm−2) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.

KW - Atomic layer deposition

KW - c-Si solar cell

KW - Luminescence

KW - Photonics

KW - Upconversion

U2 - 10.1016/j.solmat.2020.110787

DO - 10.1016/j.solmat.2020.110787

M3 - Article

AN - SCOPUS:85090731507

SN - 0927-0248

VL - 219

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

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