Metal-semiconductor-metal photodetectors

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

15 Citations (Scopus)
Original languageEnglish
Title of host publicationTesting, Reliability, and Applications of Optoelectronic Devices
PublisherSPIE
Pages198-207
Number of pages10
DOIs
Publication statusPublished - 2001
Externally publishedYes
Publication typeA4 Article in conference proceedings
EventTesting, Reliability, and Applications of Optoelectronic Devices - San Jose, CA, United States
Duration: 24 Jan 200126 Jan 2001

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-optical Instrumentation Engineers
Volume4285
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceTesting, Reliability, and Applications of Optoelectronic Devices
Country/TerritoryUnited States
CitySan Jose, CA
Period24/01/0126/01/01

Keywords

  • Bandwidth
  • External quantum efficiency
  • Field effect transistor
  • Metal-semiconductor-metal (MSM)
  • Photodetector
  • Photodiodes
  • Responsivity
  • Schottky barrier height
  • Transparent conductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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