Metamorphic growth of tensile strained GaInP on GaAs substrate

Lauri Toikkanen, Teemu Hakkarainen, Andreas Schramm, Antti Tukiainen, Pekka Laukkanen, Mircea Guina

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8 Citations (Scopus)

Translated title of the contribution	Metamorphic growth of tensile strained GaInP on GaAs substrate
Original language	English
Pages (from-to)	3105-3110
Journal	Journal of Crystal Growth
Volume	312
Issue number	21
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.07.059
Publication status	Published - 2010
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "Metamorphic growth of tensile strained GaInP on GaAs substrate",

author = "Lauri Toikkanen and Teemu Hakkarainen and Andreas Schramm and Antti Tukiainen and Pekka Laukkanen and Mircea Guina",

note = "Contribution: organisation=orc,FACT1=1",

year = "2010",

doi = "10.1016/j.jcrysgro.2010.07.059",

language = "English",

volume = "312",

pages = "3105--3110",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "21",

}

TY - JOUR

T1 - Metamorphic growth of tensile strained GaInP on GaAs substrate

AU - Toikkanen, Lauri

AU - Hakkarainen, Teemu

AU - Schramm, Andreas

AU - Tukiainen, Antti

AU - Laukkanen, Pekka

AU - Guina, Mircea

N1 - Contribution: organisation=orc,FACT1=1

PY - 2010

Y1 - 2010

U2 - 10.1016/j.jcrysgro.2010.07.059

DO - 10.1016/j.jcrysgro.2010.07.059

M3 - Article

SN - 0022-0248

VL - 312

SP - 3105

EP - 3110

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 21

ER -