Micro-Raman characterization of Germanium thin films evaporated on various substrates

V. Sorianello; L. Colace; G. Assanto; M. Nardone

doi:10.1016/j.mee.2010.10.028

Micro-Raman characterization of Germanium thin films evaporated on various substrates

V. Sorianello, L. Colace, G. Assanto, M. Nardone

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

We perform an extensive micro-Raman analysis of Germanium thin films physically evaporated on several substrates including silicon, silicon oxide and glass. We investigate the dependence of crystal quality on thin film deposition parameters such as substrate temperature and growth rate. We also study the continuous transitional change of the material structure from amorphous to crystalline phases. Ge films obtained by this simple and low cost technique are a viable solution towards the realization of virtual substrates and devices.

Original language	English
Pages (from-to)	492-495
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	4
DOIs	https://doi.org/10.1016/j.mee.2010.10.028
Publication status	Published - Apr 2011
Publication type	A1 Journal article-refereed

Keywords

Germanium
Raman characterization
Thin films

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.mee.2010.10.028

Cite this

@article{0c6ae5f25a544ee29abb9c045773e561,

title = "Micro-Raman characterization of Germanium thin films evaporated on various substrates",

abstract = "We perform an extensive micro-Raman analysis of Germanium thin films physically evaporated on several substrates including silicon, silicon oxide and glass. We investigate the dependence of crystal quality on thin film deposition parameters such as substrate temperature and growth rate. We also study the continuous transitional change of the material structure from amorphous to crystalline phases. Ge films obtained by this simple and low cost technique are a viable solution towards the realization of virtual substrates and devices.",

keywords = "Germanium, Raman characterization, Thin films",

author = "V. Sorianello and L. Colace and G. Assanto and M. Nardone",

year = "2011",

month = apr,

doi = "10.1016/j.mee.2010.10.028",

language = "English",

volume = "88",

pages = "492--495",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - Micro-Raman characterization of Germanium thin films evaporated on various substrates

AU - Sorianello, V.

AU - Colace, L.

AU - Assanto, G.

AU - Nardone, M.

PY - 2011/4

Y1 - 2011/4

N2 - We perform an extensive micro-Raman analysis of Germanium thin films physically evaporated on several substrates including silicon, silicon oxide and glass. We investigate the dependence of crystal quality on thin film deposition parameters such as substrate temperature and growth rate. We also study the continuous transitional change of the material structure from amorphous to crystalline phases. Ge films obtained by this simple and low cost technique are a viable solution towards the realization of virtual substrates and devices.

AB - We perform an extensive micro-Raman analysis of Germanium thin films physically evaporated on several substrates including silicon, silicon oxide and glass. We investigate the dependence of crystal quality on thin film deposition parameters such as substrate temperature and growth rate. We also study the continuous transitional change of the material structure from amorphous to crystalline phases. Ge films obtained by this simple and low cost technique are a viable solution towards the realization of virtual substrates and devices.

KW - Germanium

KW - Raman characterization

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=79751538206&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2010.10.028

DO - 10.1016/j.mee.2010.10.028

M3 - Article

AN - SCOPUS:79751538206

SN - 0167-9317

VL - 88

SP - 492

EP - 495

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4

ER -

Micro-Raman characterization of Germanium thin films evaporated on various substrates

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this