Micro-Raman characterization of Germanium thin films evaporated on various substrates

V. Sorianello, L. Colace, G. Assanto, M. Nardone

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)


    We perform an extensive micro-Raman analysis of Germanium thin films physically evaporated on several substrates including silicon, silicon oxide and glass. We investigate the dependence of crystal quality on thin film deposition parameters such as substrate temperature and growth rate. We also study the continuous transitional change of the material structure from amorphous to crystalline phases. Ge films obtained by this simple and low cost technique are a viable solution towards the realization of virtual substrates and devices.

    Original languageEnglish
    Pages (from-to)492-495
    Number of pages4
    JournalMicroelectronic Engineering
    Issue number4
    Publication statusPublished - Apr 2011
    Publication typeA1 Journal article-refereed


    • Germanium
    • Raman characterization
    • Thin films

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Surfaces, Coatings and Films
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics


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