Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

N. V. Kryzhanovskaya, E. I. Moiseev, Yu S. Polubavkina, F. I. Zubov, M. V. Maximov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, V. M. Korpijärvi, T. Niemi, R. Isoaho, M. Guina, M. V. Lebedev, T. V. Lvova, A. E. Zhukov

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)
    15 Downloads (Pure)


    We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T0 = 60 K.

    Original languageEnglish
    Article number233103
    JournalJournal of Applied Physics
    Issue number23
    Publication statusPublished - 21 Dec 2016
    Publication typeA1 Journal article-refereed

    Publication forum classification

    • Publication forum level 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


    Dive into the research topics of 'Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells'. Together they form a unique fingerprint.

    Cite this