Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

N. V. Kryzhanovskaya; E. I. Moiseev; Yu S. Polubavkina; F. I. Zubov; M. V. Maximov; A. A. Lipovskii; M. M. Kulagina; S. I. Troshkov; V. M. Korpijärvi; T. Niemi; R. Isoaho; M. Guina; M. V. Lebedev; T. V. Lvova; A. E. Zhukov

doi:10.1063/1.4971977

Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

N. V. Kryzhanovskaya, E. I. Moiseev, Yu S. Polubavkina, F. I. Zubov, M. V. Maximov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, V. M. Korpijärvi, T. Niemi, R. Isoaho, M. Guina, M. V. Lebedev, T. V. Lvova, A. E. Zhukov

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Abstract

We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiN_x encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T₀ = 60 K.

Original language	English
Article number	233103
Journal	Journal of Applied Physics
Volume	120
Issue number	23
DOIs	https://doi.org/10.1063/1.4971977
Publication status	Published - 21 Dec 2016
Publication type	A1 Journal article-refereed

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General Physics and Astronomy

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Kryzhanovskaya, N. V., Moiseev, E. I., Polubavkina, Y. S., Zubov, F. I., Maximov, M. V., Lipovskii, A. A., Kulagina, M. M., Troshkov, S. I., Korpijärvi, V. M., Niemi, T., Isoaho, R., Guina, M., Lebedev, M. V., Lvova, T. V., & Zhukov, A. E. (2016). Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells. Journal of Applied Physics, 120(23), Article 233103. https://doi.org/10.1063/1.4971977

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title = "Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells",

abstract = "We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T0 = 60 K.",

author = "Kryzhanovskaya, {N. V.} and Moiseev, {E. I.} and Polubavkina, {Yu S.} and Zubov, {F. I.} and Maximov, {M. V.} and Lipovskii, {A. A.} and Kulagina, {M. M.} and Troshkov, {S. I.} and Korpij{\"a}rvi, {V. M.} and T. Niemi and R. Isoaho and M. Guina and Lebedev, {M. V.} and Lvova, {T. V.} and Zhukov, {A. E.}",

year = "2016",

month = dec,

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doi = "10.1063/1.4971977",

language = "English",

volume = "120",

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T1 - Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

AU - Kryzhanovskaya, N. V.

AU - Moiseev, E. I.

AU - Polubavkina, Yu S.

AU - Zubov, F. I.

AU - Maximov, M. V.

AU - Lipovskii, A. A.

AU - Kulagina, M. M.

AU - Troshkov, S. I.

AU - Korpijärvi, V. M.

AU - Niemi, T.

AU - Isoaho, R.

AU - Guina, M.

AU - Lebedev, M. V.

AU - Lvova, T. V.

AU - Zhukov, A. E.

PY - 2016/12/21

Y1 - 2016/12/21

N2 - We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T0 = 60 K.

AB - We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a diameter of 31 μm based on three GaInNAs/GaAs quantum wells and fabricated without passivation show lasing up to 170 K with a characteristic temperature of T0 = 60 K.

U2 - 10.1063/1.4971977

DO - 10.1063/1.4971977

M3 - Article

AN - SCOPUS:85007017155

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 23

M1 - 233103

ER -

Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells

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