Misfit dislocations in GaAsN/GaAs interface

J. Toivonen; T. Tuomi; J. Riikonen; L. Knuuttila; T. Hakkarainen; M. Sopanen; H. Lipsanen; P.J. McNally; W. Chen; D. Lowney

doi:10.1023/A:1023999106469

Misfit dislocations in GaAsN/GaAs interface

J. Toivonen, T. Tuomi, J. Riikonen, L. Knuuttila, T. Hakkarainen, M. Sopanen, H. Lipsanen, P.J. McNally, W. Chen, D. Lowney

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Translated title of the contribution	Misfit dislocations in GaAsN/GaAs interface
Original language	English
Pages (from-to)	267-270
Journal	Journal of Materials Science: Materials in Electronics
Volume	14
Issue number	5-7
DOIs	https://doi.org/10.1023/A:1023999106469
Publication status	Published - 2003
Externally published	Yes
Publication type	A1 Journal article-refereed

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Publication forum level 1

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10.1023/A:1023999106469

Cite this

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title = "Misfit dislocations in GaAsN/GaAs interface",

author = "J. Toivonen and T. Tuomi and J. Riikonen and L. Knuuttila and T. Hakkarainen and M. Sopanen and H. Lipsanen and P.J. McNally and W. Chen and D. Lowney",

note = "Contribution: organisation=fys,FACT1=1",

year = "2003",

doi = "10.1023/A:1023999106469",

language = "English",

volume = "14",

pages = "267--270",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

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TY - JOUR

T1 - Misfit dislocations in GaAsN/GaAs interface

AU - Toivonen, J.

AU - Tuomi, T.

AU - Riikonen, J.

AU - Knuuttila, L.

AU - Hakkarainen, T.

AU - Sopanen, M.

AU - Lipsanen, H.

AU - McNally, P.J.

AU - Chen, W.

AU - Lowney, D.

N1 - Contribution: organisation=fys,FACT1=1

PY - 2003

Y1 - 2003

U2 - 10.1023/A:1023999106469

DO - 10.1023/A:1023999106469

M3 - Article

SN - 0957-4522

VL - 14

SP - 267

EP - 270

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 5-7

ER -