Model of Growth of Single-Domain GaAs Layers on Double-Domain Si Substrates by Molecular Beam Epitaxy

J. Varrio, H. Asonen, J. Lammasniemi, K. Rakennus, M. Pessa

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientific

    Translated title of the contributionModel of Growth of Single-Domain GaAs Layers on Double-Domain Si Substrates by Molecular Beam Epitaxy
    Original languageEnglish
    Title of host publicationProc. of the XXIV Ann. Conf. of the Finnish Phys. Soc., March 29-31, 1990
    Place of PublicationTampere
    Publication statusPublished - 1990
    Publication typeB3 Article in conference proceedings

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