Translated title of the contribution | Model of Growth of Single-Domain GaAs Layers on Double-Domain Si Substrates by Molecular Beam Epitaxy |
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Original language | English |
Title of host publication | Proc. of the XXIV Ann. Conf. of the Finnish Phys. Soc., March 29-31, 1990 |
Place of Publication | Tampere |
Publication status | Published - 1990 |
Publication type | B3 Article in conference proceedings |
Publication forum classification
- No publication forum level