Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy

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Translated title of the contribution	Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy
Original language	English
Pages (from-to)	1987-1989
Journal	Applied Physics Letters
Volume	55
Issue number	19
Publication status	Published - 1989
Publication type	A1 Journal article-refereed

Publication forum classification

@article{5f08167f05ac4730af4d9058e06bdb03,

title = "Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy",

author = "J. Varrio and H. Asonen and J. Lammasniemi and K. Rakennus and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1989",

language = "English",

volume = "55",

pages = "1987--1989",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy

AU - Varrio, J.

AU - Asonen, H.

AU - Lammasniemi, J.

AU - Rakennus, K.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1989

Y1 - 1989

M3 - Article

SN - 0003-6951

VL - 55

SP - 1987

EP - 1989

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -