Model of Growth of Single-Domain GaAs Layers on Double-Domain Si Substrates by Molecular Beam Epitaxy

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Translated title of the contribution	Model of Growth of Single-Domain GaAs Layers on Double-Domain Si Substrates by Molecular Beam Epitaxy
Original language	English
Title of host publication	Proc. of the XXIV Ann. Conf. of the Finnish Phys. Soc., March 29-31, 1990
Place of Publication	Tampere
Publication status	Published - 1990
Publication type	B3 Article in conference proceedings

Publication forum classification

@inproceedings{53d13ac5373d400c9132a9922f21ade6,

title = "Model of Growth of Single-Domain GaAs Layers on Double-Domain Si Substrates by Molecular Beam Epitaxy",

author = "J. Varrio and H. Asonen and J. Lammasniemi and K. Rakennus and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1990",

language = "English",

booktitle = "Proc. of the XXIV Ann. Conf. of the Finnish Phys. Soc., March 29-31, 1990",

}

TY - GEN

T1 - Model of Growth of Single-Domain GaAs Layers on Double-Domain Si Substrates by Molecular Beam Epitaxy

AU - Varrio, J.

AU - Asonen, H.

AU - Lammasniemi, J.

AU - Rakennus, K.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1990

Y1 - 1990

M3 - Conference contribution

BT - Proc. of the XXIV Ann. Conf. of the Finnish Phys. Soc., March 29-31, 1990

CY - Tampere

ER -