Models for thermal dissociation of silane on a polysilicon surface

Tapio T. Rantala

doi:10.1007/BF00343420

Models for thermal dissociation of silane on a polysilicon surface

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.

Original language	English
Pages (from-to)	215-220
Number of pages	6
Journal	Applied Physics A Solids and Surfaces
Volume	50
Issue number	2
DOIs	https://doi.org/10.1007/BF00343420
Publication status	Published - Feb 1990
Externally published	Yes
Publication type	A1 Journal article-refereed

Keywords

68.55
82.65

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
Materials Science(all)
Engineering(all)

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10.1007/BF00343420

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title = "Models for thermal dissociation of silane on a polysilicon surface",

abstract = "Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.",

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AU - Rantala, Tapio T.

PY - 1990/2

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N2 - Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.

AB - Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.

KW - 68.55

KW - 82.65

U2 - 10.1007/BF00343420

DO - 10.1007/BF00343420

M3 - Article

AN - SCOPUS:0025385831

SN - 0721-7250

VL - 50

SP - 215

EP - 220

JO - Applied Physics A Solids and Surfaces

JF - Applied Physics A Solids and Surfaces

IS - 2

ER -

Models for thermal dissociation of silane on a polysilicon surface

Abstract

Keywords

ASJC Scopus subject areas

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