Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.
|Number of pages||6|
|Journal||Applied Physics A Solids and Surfaces|
|Publication status||Published - Feb 1990|
|Publication type||A1 Journal article-refereed|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Materials Science(all)