Monolithic GaInNAsSb/GaAs VECSEL Operating at 1550 nm

Ville-Markus Korpijärvi, Emmi L. Kantola, Tomi Leinonen, Riku Isoaho, Mircea Guina

    Research output: Contribution to journalArticleScientificpeer-review

    27 Citations (Scopus)

    Abstract

    The first monolithic GaAs-based vertical-external-cavity surface-emitting laser (VECSEL) operating at 1550 nm is reported. The VECSEL operation is based on a gain mirror which was grown in a single growth run by plasma-assisted molecular beam epitaxy. The gain mirror comprised eight GaInNAsSb/GaAs quantum wells with a photoluminescence peak at 1505 nm and an AlAs/GaAs distributed Bragg reflector ensuring high reflectivity. The VECSEL chip was pumped with an 808-nm diode laser that had a large quantum defect in respect to the lasing wavelength. An output power of 80 mW in continuous wave mode and 210 mW in pulsed pump mode are demonstrated close to room temperature.
    Original languageEnglish
    Article number1700705
    JournalIEEE Journal of Selected Topics in Quantum Electronics
    Volume21
    Issue number6
    DOIs
    Publication statusPublished - 20 Mar 2015
    Publication typeA1 Journal article-refereed

    Publication forum classification

    • Publication forum level 2

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