Monolithic Si/SiGe HBT-RITD circuit with controllable negative differential resistance for voltage controlled oscillator applications

Sung Yong Chung; Si Young Park; Jeffrey W. Daulton; Ronghua Yu; Paul R. Berger; Phillip E. Thompson

doi:10.1109/ISDRS.2005.1596028

Monolithic Si/SiGe HBT-RITD circuit with controllable negative differential resistance for voltage controlled oscillator applications

Sung Yong Chung^*
, Si Young Park
, Jeffrey W. Daulton
, Ronghua Yu
, Paul R. Berger
, Phillip E. Thompson

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Publisher	IEEE
Pages	155-156
Number of pages	2
ISBN (Print)	1424400848, 9781424400843
DOIs	https://doi.org/10.1109/ISDRS.2005.1596028
Publication status	Published - 2005
Externally published	Yes
Publication type	A4 Article in conference proceedings
Event	International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: 7 Dec 2005 → 9 Dec 2005

Conference

Conference	International Semiconductor Device Research Symposium
Country/Territory	United States
City	Bethesda, MD
Period	7/12/05 → 9/12/05

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/ISDRS.2005.1596028

Cite this

@inproceedings{aa115377bf224dab9378bf7ac55d33ca,

title = "Monolithic Si/SiGe HBT-RITD circuit with controllable negative differential resistance for voltage controlled oscillator applications",

author = "Chung, \{Sung Yong\} and Park, \{Si Young\} and Daulton, \{Jeffrey W.\} and Ronghua Yu and Berger, \{Paul R.\} and Thompson, \{Phillip E.\}",

year = "2005",

doi = "10.1109/ISDRS.2005.1596028",

language = "English",

isbn = "1424400848",

pages = "155--156",

booktitle = "2005 International Semiconductor Device Research Symposium",

publisher = "IEEE",

address = "United States",

}

Chung, SY, Park, SY, Daulton, JW, Yu, R, Berger, PR & Thompson, PE 2005, Monolithic Si/SiGe HBT-RITD circuit with controllable negative differential resistance for voltage controlled oscillator applications. in 2005 International Semiconductor Device Research Symposium., 1596028, IEEE, pp. 155-156, International Semiconductor Device Research Symposium, Bethesda, MD, United States, 7/12/05. https://doi.org/10.1109/ISDRS.2005.1596028

Monolithic Si/SiGe HBT-RITD circuit with controllable negative differential resistance for voltage controlled oscillator applications. / Chung, Sung Yong; Park, Si Young; Daulton, Jeffrey W. et al.
2005 International Semiconductor Device Research Symposium. IEEE, 2005. p. 155-156 1596028.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Monolithic Si/SiGe HBT-RITD circuit with controllable negative differential resistance for voltage controlled oscillator applications

AU - Chung, Sung Yong

AU - Park, Si Young

AU - Daulton, Jeffrey W.

AU - Yu, Ronghua

AU - Berger, Paul R.

AU - Thompson, Phillip E.

PY - 2005

Y1 - 2005

U2 - 10.1109/ISDRS.2005.1596028

DO - 10.1109/ISDRS.2005.1596028

M3 - Conference contribution

AN - SCOPUS:33847228379

SN - 1424400848

SN - 9781424400843

SP - 155

EP - 156

BT - 2005 International Semiconductor Device Research Symposium

PB - IEEE

T2 - International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -