Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios

Sung Yong Chung; Niu Jin; Ronghua Yu; Paul R. Berger; Phillip E. Thompson; Roger Lake; Sean L. Rommel; Santosh K. Kurinec

doi:10.1109/IEDM.2003.1269283

Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios

Sung Yong Chung, Niu Jin, Ronghua Yu, Paul R. Berger, Phillip E. Thompson, Roger Lake, Sean L. Rommel, Santosh K. Kurinec

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Abstract

We report the first monolithic vertical integration of a Si / SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting 2003
Publisher	IEEE
Pages	296-299
Number of pages	4
ISBN (Print)	0-7803-7872-5
DOIs	https://doi.org/10.1109/IEDM.2003.1269283
Publication status	Published - 2003
Externally published	Yes
Publication type	A4 Article in conference proceedings
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 8 Dec 2003 → 10 Dec 2003

Publication series

Name	Technical Digest - International Electron Devices Meeting
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISSN (Print)	0163-1918

Conference

Conference	IEEE International Electron Devices Meeting
Country/Territory	United States
City	Washington, DC
Period	8/12/03 → 10/12/03

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2003.1269283

Cite this

Chung, S. Y., Jin, N., Yu, R., Berger, P. R., Thompson, P. E., Lake, R., Rommel, S. L., & Kurinec, S. K. (2003). Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios. In IEEE International Electron Devices Meeting 2003 (pp. 296-299). (Technical Digest - International Electron Devices Meeting). IEEE. https://doi.org/10.1109/IEDM.2003.1269283

@inproceedings{f4a9aede94e3433da06bcf54fb5ffed0,

title = "Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios",

abstract = "We report the first monolithic vertical integration of a Si / SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics.",

author = "Chung, {Sung Yong} and Niu Jin and Ronghua Yu and Berger, {Paul R.} and Thompson, {Phillip E.} and Roger Lake and Rommel, {Sean L.} and Kurinec, {Santosh K.}",

year = "2003",

doi = "10.1109/IEDM.2003.1269283",

language = "English",

isbn = "0-7803-7872-5",

series = "Technical Digest - International Electron Devices Meeting",

publisher = "IEEE",

pages = "296--299",

booktitle = "IEEE International Electron Devices Meeting 2003",

address = "United States",

}

Chung, SY, Jin, N, Yu, R, Berger, PR, Thompson, PE, Lake, R, Rommel, SL & Kurinec, SK 2003, Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios. in IEEE International Electron Devices Meeting 2003. Technical Digest - International Electron Devices Meeting, IEEE, pp. 296-299, IEEE International Electron Devices Meeting, Washington, DC, United States, 8/12/03. https://doi.org/10.1109/IEDM.2003.1269283

Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios. / Chung, Sung Yong; Jin, Niu; Yu, Ronghua et al.
IEEE International Electron Devices Meeting 2003. IEEE, 2003. p. 296-299 (Technical Digest - International Electron Devices Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios

AU - Chung, Sung Yong

AU - Jin, Niu

AU - Yu, Ronghua

AU - Berger, Paul R.

AU - Thompson, Phillip E.

AU - Lake, Roger

AU - Rommel, Sean L.

AU - Kurinec, Santosh K.

PY - 2003

Y1 - 2003

N2 - We report the first monolithic vertical integration of a Si / SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics.

AB - We report the first monolithic vertical integration of a Si / SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics.

U2 - 10.1109/IEDM.2003.1269283

DO - 10.1109/IEDM.2003.1269283

M3 - Conference contribution

AN - SCOPUS:0842288265

SN - 0-7803-7872-5

T3 - Technical Digest - International Electron Devices Meeting

SP - 296

EP - 299

BT - IEEE International Electron Devices Meeting 2003

PB - IEEE

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Chung SY, Jin N, Yu R, Berger PR, Thompson PE, Lake R et al. Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios. In IEEE International Electron Devices Meeting 2003. IEEE. 2003. p. 296-299. (Technical Digest - International Electron Devices Meeting). doi: 10.1109/IEDM.2003.1269283

Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios

Abstract

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Conference

ASJC Scopus subject areas

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