Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios

Sung Yong Chung, Niu Jin, Ronghua Yu, Paul R. Berger, Phillip E. Thompson, Roger Lake, Sean L. Rommel, Santosh K. Kurinec

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

We report the first monolithic vertical integration of a Si / SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting 2003
PublisherIEEE
Pages296-299
Number of pages4
ISBN (Print)0-7803-7872-5
DOIs
Publication statusPublished - 2003
Externally publishedYes
Publication typeA4 Article in a conference publication
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 8 Dec 200310 Dec 2003

Publication series

NameTechnical Digest - International Electron Devices Meeting
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting
Country/TerritoryUnited States
CityWashington, DC
Period8/12/0310/12/03

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios'. Together they form a unique fingerprint.

Cite this