Nanohole Etching in AlGaSb with Gallium Droplets

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Abstract

We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270 to 500 °C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can obtain a high degree of control over droplet formation and nanohole etching steps and reveal the physics of adatom diffusion in these processes. Furthermore, by combining the experimental results and a geometric diffusion-based model, we can determine the temperature and Sb-flux dependencies of the critical monolayer coverage of Sb atoms required for driving the droplet etching process to completion. These findings provide new insight into the droplet formation and etching process present in the droplet-mediated synthesis of semiconductor nanostructures and represent a significant step toward development of telecom-emitting quantum dots in the GaSb system.

Original languageEnglish
Pages (from-to)1917–1923
Number of pages7
JournalCrystal Growth and Design
Volume21
Issue number4
DOIs
Publication statusPublished - 2021
Publication typeA1 Journal article-refereed

Publication forum classification

  • Publication forum level 2

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics

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