Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells

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Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.
Original languageEnglish
Title of host publication2019 European Space Power Conference (ESPC)
Number of pages3
ISBN (Electronic)978-1-7281-2126-0
ISBN (Print)978-1-7281-2127-7
Publication statusPublished - 2019
Publication typeA4 Article in conference proceedings
EventEuropean Space Power Conference -
Duration: 1 Jan 2000 → …


ConferenceEuropean Space Power Conference
Period1/01/00 → …


  • Solar cell
  • dilute nitride semiconductors
  • III-V semiconductor

Publication forum classification

  • Publication forum level 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment


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