Activities per year
Abstract
Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.
Original language | English |
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Title of host publication | 2019 European Space Power Conference (ESPC) |
Publisher | IEEE |
Number of pages | 3 |
ISBN (Electronic) | 978-1-7281-2126-0 |
ISBN (Print) | 978-1-7281-2127-7 |
DOIs | |
Publication status | Published - 2019 |
Publication type | A4 Article in conference proceedings |
Event | European Space Power Conference - Duration: 1 Jan 2000 → … |
Conference
Conference | European Space Power Conference |
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Period | 1/01/00 → … |
Keywords
- Solar cell
- dilute nitride semiconductors
- III-V semiconductor
Publication forum classification
- Publication forum level 1
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
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Dive into the research topics of 'Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells'. Together they form a unique fingerprint.Activities
- 1 Conference presentation
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Narrow Bandgap Dilute Nitride Materials for 6- junction Space Solar Cells
Riku Isoaho (Speaker), Arto Aho (Contributor), Antti Tukiainen (Contributor), Timo Aho (Contributor), Marianna Raappana (Contributor), Turkka Salminen (Contributor), Jarno Ville Tapio Reuna (Contributor) & Mircea Guina (Contributor)
1 Oct 2019Activity: Talk or presentation › Conference presentation