New approach to growth of high-quality GaAs layers on Si

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Translated title of the contribution	New approach to growth of high-quality GaAs layers on Si
Original language	English
Pages (from-to)	1801-1803
Journal	Applied Physics Letters
Volume	51
Issue number	22
Publication status	Published - 1987
Publication type	A1 Journal article-refereed

Publication forum classification

@article{684742c15900413f856413dcb5ed5d76,

title = "New approach to growth of high-quality GaAs layers on Si",

author = "J. Varrio and A. Salokatve and H. Asonen and M. Pessa and E. Rauhala and J. Keinonen",

note = "Contribution: organisation=fys,FACT1=1",

year = "1987",

language = "English",

volume = "51",

pages = "1801--1803",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}