Nitrogen-enhanced indium segregation in (Ga, In)(N, As)/GaAs multiple quantum wells grown by molecular-beam epitaxy

E. Luna, A. Trampert, E-M. Pavelescu, M. Pessa

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Translated title of the contribution	Nitrogen-enhanced indium segregation in (Ga, In)(N, As)/GaAs multiple quantum wells grown by molecular-beam epitaxy
Original language	English
Pages (from-to)	11 p
Journal	New Journal of Physics
Volume	9
Issue number	405
DOIs	https://doi.org/10.1088/1367-2630/9/11/405
Publication status	Published - 2007
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "Nitrogen-enhanced indium segregation in (Ga, In)(N, As)/GaAs multiple quantum wells grown by molecular-beam epitaxy",

author = "E. Luna and A. Trampert and E-M. Pavelescu and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2007",

doi = "10.1088/1367-2630/9/11/405",

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journal = "New Journal of Physics",

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TY - JOUR

T1 - Nitrogen-enhanced indium segregation in (Ga, In)(N, As)/GaAs multiple quantum wells grown by molecular-beam epitaxy

AU - Luna, E.

AU - Trampert, A.

AU - Pavelescu, E-M.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2007

Y1 - 2007

U2 - 10.1088/1367-2630/9/11/405

DO - 10.1088/1367-2630/9/11/405

M3 - Article

SN - 1367-2630

VL - 9

SP - 11 p

JO - New Journal of Physics

JF - New Journal of Physics

IS - 405

ER -