Noise characterization of Ge/Si photodetectors

Lorenzo Colace, Andrea Scacchi, Gaetano Assanto

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    6 Citations (Scopus)

    Abstract

    We invesyigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.

    Original languageEnglish
    Title of host publication8th IEEE International Conference on Group IV Photonics, GFP 2011
    Pages290-292
    Number of pages3
    DOIs
    Publication statusPublished - 2011
    Publication typeA4 Article in conference proceedings
    Event8th IEEE International Conference on Group IV Photonics, GFP 2011 - London, United Kingdom
    Duration: 14 Sept 201116 Sept 2011

    Conference

    Conference8th IEEE International Conference on Group IV Photonics, GFP 2011
    Country/TerritoryUnited Kingdom
    CityLondon
    Period14/09/1116/09/11

    Keywords

    • Ge/Si photodetectors
    • near infrared
    • noise

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Ceramics and Composites
    • Electronic, Optical and Magnetic Materials

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