Novel self-catalyzed GaAs nanowires with electrical contacts

Marcelo R. Piton, Eero Koivusalo, Soile Suomalainen, Teemu Hakkarainen, Mircea Guina

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


    Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.
    Original languageEnglish
    Title of host publication2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)
    Number of pages3
    ISBN (Electronic)978-1-5090-2788-0
    Publication statusPublished - 3 Nov 2016
    Publication typeA4 Article in conference proceedings
    EventSymposium on Microelectronics Technology and Devices -
    Duration: 1 Jan 1900 → …


    ConferenceSymposium on Microelectronics Technology and Devices
    Period1/01/00 → …


    • III-V semiconductors
    • electrical contacts
    • electron beam lithography
    • elemental semiconductors
    • gallium arsenide
    • molecular beam epitaxial growth
    • nanowires
    • silicon
    • wide band gap semiconductors
    • lithography-free silicon-silicon oxide patterns
    • molecular beam epitaxy
    • self-assembled method
    • self-catalyzed gallium arsenide nanowires
    • transport measurements
    • Contacts
    • Gallium arsenide
    • Nanowires
    • Scanning electron microscopy
    • Silicon
    • Substrates
    • Surface morphology
    • III-V nanowires
    • semiconductor nanostructures
    • transport properties

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    • Publication forum level 1


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