Novel self-catalyzed GaAs nanowires with electrical contacts

Marcelo R. Piton, Eero Koivusalo, Soile Suomalainen, Teemu Hakkarainen, Mircea Guina

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.
    Original languageEnglish
    Title of host publication2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)
    PublisherIEEE
    Pages1-3
    Number of pages3
    ISBN (Electronic)978-1-5090-2788-0
    DOIs
    Publication statusPublished - 3 Nov 2016
    Publication typeA4 Article in conference proceedings
    EventSymposium on Microelectronics Technology and Devices -
    Duration: 1 Jan 1900 → …

    Conference

    ConferenceSymposium on Microelectronics Technology and Devices
    Period1/01/00 → …

    Keywords

    • III-V semiconductors
    • electrical contacts
    • electron beam lithography
    • elemental semiconductors
    • gallium arsenide
    • molecular beam epitaxial growth
    • nanowires
    • silicon
    • wide band gap semiconductors
    • lithography-free silicon-silicon oxide patterns
    • molecular beam epitaxy
    • self-assembled method
    • self-catalyzed gallium arsenide nanowires
    • transport measurements
    • Contacts
    • Gallium arsenide
    • Nanowires
    • Scanning electron microscopy
    • Silicon
    • Substrates
    • Surface morphology
    • III-V nanowires
    • semiconductor nanostructures
    • transport properties

    Publication forum classification

    • Publication forum level 1

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