Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy

M. R. Piton, E. Koivusalo, S. Suomalainen, T. Hakkarainen, S. Souto, H. V. A. Galeti, A. Schramm, Y. G. Gobato, M. Guina

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    We have investigated optical and electrical properties of Te and Be doped GaAs nanowires (NW) grown by self-catalyzed molecular beam epitaxy. The NWs were grown on p-Si(111) substrates using a novel technique based on lithography-free Si/SiOx patterns fabricated by droplet epitaxy and spontaneous oxidation, which allows synthesis of highly uniform NWs with controllable size and density. The incorporation of Be- and Te-dopants in GaAs NWs was investigated by using transport, photoluminescence (PL) and Raman spectroscopy techniques.
    Original languageEnglish
    Title of host publication2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro)
    PublisherIEEE
    ISBN (Electronic)978-1-5386-2877-5
    DOIs
    Publication statusPublished - 1 Aug 2017
    Publication typeA4 Article in a conference publication
    EventSymposium on Microelectronics Technology and Devices -
    Duration: 1 Jan 1900 → …

    Conference

    ConferenceSymposium on Microelectronics Technology and Devices
    Period1/01/00 → …

    Keywords

    • III-V semiconductors
    • Raman spectra
    • beryllium
    • catalysis
    • gallium arsenide
    • molecular beam epitaxial growth
    • nanofabrication
    • nanowires
    • oxidation
    • photoluminescence
    • semiconductor epitaxial layers
    • semiconductor growth
    • semiconductor quantum wires
    • tellurium
    • GaAs:Te,Be
    • Raman spectroscopy
    • Si
    • Te-Be doped GaAs nanowires
    • Te-dopants
    • droplet epitaxy
    • highly uniform NWs
    • lithography-free Si-SiOx patterns
    • p-Si(111) substrates
    • self-catalyzed molecular beam epitaxy
    • spontaneous oxidation
    • transport properties
    • Contacts
    • Doping
    • Gallium arsenide
    • Metals
    • Nanowires
    • Silicon
    • Substrates
    • Be and Te doping
    • GaAs nanowires
    • electrical contacts
    • electron beam lithography
    • optical characterization

    Publication forum classification

    • Publication forum level 1

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