Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs

Ville Polojärvi, Emil-Mihai Pavelescu, Andreas Schramm, Antti Tukiainen, Arto Aho, Janne Puustinen, Mircea Guina

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    The optical properties of p-i-n solar cells comprised of InAs quantum dots embedded within GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating GaNAs and GaInNAs layers shift the photoluminescence emission as well as absorption edge of the quantum dots to longer wavelengths. GaNAs and GaInNAs quantum wells contribute also to extending the absorption edge. In addition, the use of GaNAs and GaInNAs layers enhances the thermal escape of electrons from QDs by introducing steps for electrons to the GaAs conduction band.

    Original languageEnglish
    Pages (from-to)122-125
    Number of pages4
    JournalScripta Materialia
    Volume108
    Early online date19 Jun 2015
    DOIs
    Publication statusPublished - 2015
    Publication typeA1 Journal article-refereed

    Keywords

    • Quantum dot
    • Quantum well
    • Solar cell
    • Strain engineering
    • Thermal escape

    Publication forum classification

    • Publication forum level 3

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

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