Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda ~ 980 nm) grown by gas-source MBE

G. Zhang; A. Ovtchinnikov; J. Näppi; H. Asonen; M. Pessa

Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda ~ 980 nm) grown by gas-source MBE

G. Zhang, A. Ovtchinnikov, J. Näppi, H. Asonen, M. Pessa

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Translated title of the contribution	Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda ~ 980 nm) grown by gas-source MBE
Original language	English
Pages (from-to)	1943-1949
Journal	IEEE journal of quantum electronics
Volume	29
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

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Cite this

@article{5f9f5cd3e1b844cfa4e355fac9a45c47,

title = "Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda \textasciitilde{} 980 nm) grown by gas-source MBE",

author = "G. Zhang and A. Ovtchinnikov and J. N{\"a}ppi and H. Asonen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "29",

pages = "1943--1949",

journal = "IEEE journal of quantum electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda ~ 980 nm) grown by gas-source MBE

AU - Zhang, G.

AU - Ovtchinnikov, A.

AU - Näppi, J.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

SN - 0018-9197

VL - 29

SP - 1943

EP - 1949

JO - IEEE journal of quantum electronics

JF - IEEE journal of quantum electronics

ER -