Origin of improved luminescence efficiency after annealing of Ga (In) NAs materials grown by molecular-beam epitaxy

W. Li, M. Pessa, T. Ahlgren, J. Dekker

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Translated title of the contribution	Origin of improved luminescence efficiency after annealing of Ga (In) NAs materials grown by molecular-beam epitaxy
Original language	English
Pages (from-to)	1094-1096
Journal	Applied Physics Letters
Volume	79
Issue number	8
Publication status	Published - 2001
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "Origin of improved luminescence efficiency after annealing of Ga (In) NAs materials grown by molecular-beam epitaxy",

author = "W. Li and M. Pessa and T. Ahlgren and J. Dekker",

note = "Contribution: organisation=orc,FACT1=1",

year = "2001",

language = "English",

volume = "79",

pages = "1094--1096",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

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TY - JOUR

T1 - Origin of improved luminescence efficiency after annealing of Ga (In) NAs materials grown by molecular-beam epitaxy

AU - Li, W.

AU - Pessa, M.

AU - Ahlgren, T.

AU - Dekker, J.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2001

Y1 - 2001

M3 - Article

SN - 0003-6951

VL - 79

SP - 1094

EP - 1096

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -