Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy

W. Li, M. Pessa, T. Ahlgren, J. Dekker

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Translated title of the contributionOrigin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy
    Original languageEnglish
    Title of host publicationPhotodetector Materials and Devices VII, 21-23 January 2002, San Jose, USA, Proceedings of SPIE
    EditorsJ.G. Brown, M. Razeghi
    Pages207-212
    Publication statusPublished - 2002
    Publication typeA4 Article in conference proceedings

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