@inproceedings{c45160e596ba4090887eebffe9943818,
title = "Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy",
author = "W. Li and M. Pessa and T. Ahlgren and J. Dekker",
note = "yhdistetty ja poistettu r=758 e-tyyppinen<br/>Contribution: organisation=orc,FACT1=1",
year = "2002",
language = "English",
pages = "207--212",
editor = "J.G. Brown and M. Razeghi",
booktitle = "Photodetector Materials and Devices VII, 21-23 January 2002, San Jose, USA, Proceedings of SPIE",
}