Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

M. Punkkinen; P. Laukkanen; J. Lång; M. Kuzmin; M. Tuominen; V. Tuominen; J. Dahl; Markus Pessa; Mircea Guina; K. Kokko; J. Sadowski; B. Johansson; I. Väyrynen; L. Vitos

doi:10.1103/PhysRevB.83.195329

Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

M. Punkkinen, P. Laukkanen, J. Lång, M. Kuzmin, M. Tuominen, V. Tuominen, J. Dahl, Markus Pessa, Mircea Guina, K. Kokko, J. Sadowski, B. Johansson, I. Väyrynen, L. Vitos

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Translated title of the contribution	Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces
Original language	English
Article number	195329
Pages (from-to)	1-6
Number of pages	6
Journal	Physical Review B
Volume	83
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.83.195329
Publication status	Published - 2011
Publication type	A1 Journal article-refereed

Publication forum classification

Publication forum level 2

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10.1103/PhysRevB.83.195329

Cite this

Punkkinen, M., Laukkanen, P., Lång, J., Kuzmin, M., Tuominen, M., Tuominen, V., Dahl, J., Pessa, M., Guina, M., Kokko, K., Sadowski, J., Johansson, B., Väyrynen, I., & Vitos, L. (2011). Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces. Physical Review B, 83(19), 1-6. Article 195329. https://doi.org/10.1103/PhysRevB.83.195329

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title = "Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces",

author = "M. Punkkinen and P. Laukkanen and J. L{\aa}ng and M. Kuzmin and M. Tuominen and V. Tuominen and J. Dahl and Markus Pessa and Mircea Guina and K. Kokko and J. Sadowski and B. Johansson and I. V{\"a}yrynen and L. Vitos",

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Punkkinen, M, Laukkanen, P, Lång, J, Kuzmin, M, Tuominen, M, Tuominen, V, Dahl, J, Pessa, M, Guina, M, Kokko, K, Sadowski, J, Johansson, B, Väyrynen, I & Vitos, L 2011, 'Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces', Physical Review B, vol. 83, no. 19, 195329, pp. 1-6. https://doi.org/10.1103/PhysRevB.83.195329

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T1 - Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

AU - Punkkinen, M.

AU - Laukkanen, P.

AU - Lång, J.

AU - Kuzmin, M.

AU - Tuominen, M.

AU - Tuominen, V.

AU - Dahl, J.

AU - Pessa, Markus

AU - Guina, Mircea

AU - Kokko, K.

AU - Sadowski, J.

AU - Johansson, B.

AU - Väyrynen, I.

AU - Vitos, L.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2011

Y1 - 2011

U2 - 10.1103/PhysRevB.83.195329

DO - 10.1103/PhysRevB.83.195329

M3 - Article

SN - 1098-0121

VL - 83

SP - 1

EP - 6

JO - Physical Review B

JF - Physical Review B

IS - 19

M1 - 195329

ER -