Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular beam epitaxy

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Translated title of the contribution	Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular beam epitaxy
Original language	English
Pages (from-to)	549-552
Journal	Journal of Materials Science: Materials in Electronics
Volume	13
Publication status	Published - 2002
Publication type	A1 Journal article-refereed

Publication forum classification

@article{13233586506a47ebb9b51d45ddc0bb31,

title = "Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular beam epitaxy",

author = "N. Xiang and A. Tukiainen and M. Pessa and J. Dekker and J. Likonen",

note = "Contribution: organisation=orc,FACT1=1",

year = "2002",

language = "English",

volume = "13",

pages = "549--552",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

}

TY - JOUR

T1 - Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular beam epitaxy

AU - Xiang, N.

AU - Tukiainen, A.

AU - Pessa, M.

AU - Dekker, J.

AU - Likonen, J.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2002

Y1 - 2002

M3 - Article

SN - 0957-4522

VL - 13

SP - 549

EP - 552

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

ER -