`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

K. D. Hobart, P. E. Thompson, S. L. Rommel, T. E. Dillon, P. R. Berger, D. S. Simons, P. H. Chi

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)


Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.

Original languageEnglish
Pages (from-to)290-293
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
Publication statusPublished - 2001
Externally publishedYes
Publication typeA1 Journal article-refereed

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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