`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

K. D. Hobart; P. E. Thompson; S. L. Rommel; T. E. Dillon; P. R. Berger; D. S. Simons; P. H. Chi

doi:10.1116/1.1339011

`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

K. D. Hobart, P. E. Thompson, S. L. Rommel, T. E. Dillon, P. R. Berger, D. S. Simons, P. H. Chi

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Abstract

Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.

Original language	English
Pages (from-to)	290-293
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	1
DOIs	https://doi.org/10.1116/1.1339011
Publication status	Published - 2001
Externally published	Yes
Publication type	A1 Journal article-refereed

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1339011

Cite this

@article{8e030f55458b4bec93952eb096f38f45,

title = "`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy",

abstract = "Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.",

author = "Hobart, {K. D.} and Thompson, {P. E.} and Rommel, {S. L.} and Dillon, {T. E.} and Berger, {P. R.} and Simons, {D. S.} and Chi, {P. H.}",

year = "2001",

doi = "10.1116/1.1339011",

language = "English",

volume = "19",

pages = "290--293",

number = "1",

}

TY - JOUR

T1 - `p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

AU - Hobart, K. D.

AU - Thompson, P. E.

AU - Rommel, S. L.

AU - Dillon, T. E.

AU - Berger, P. R.

AU - Simons, D. S.

AU - Chi, P. H.

PY - 2001

Y1 - 2001

N2 - Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.

AB - Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A “p-on-n” configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.

U2 - 10.1116/1.1339011

DO - 10.1116/1.1339011

M3 - Article

AN - SCOPUS:0035083659

VL - 19

SP - 290

EP - 293

IS - 1

ER -

`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this