Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Arto Aho; Riku Isoaho; Antti Tukiainen; Ville Polojärvi; Marianna Raappana; Timo Aho; Mircea Guina

doi:10.1051/e3sconf/20171603008

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Arto Aho, Riku Isoaho, Antti Tukiainen, Ville Polojärvi, Marianna Raappana, Timo Aho, Mircea Guina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

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Abstract

Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

Original language	English
Title of host publication	11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece
Publisher	EDP Sciences
DOIs	https://doi.org/10.1051/e3sconf/20171603008
Publication status	Published - 2017
Publication type	A4 Article in conference proceedings
Event	European Space Power Conference - Duration: 1 Jan 2000 → …

Publication series

Name	E3S Web of Conferences
Volume	16
ISSN (Electronic)	2267-1242

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Conference	European Space Power Conference
Period	1/01/00 → …

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10.1051/e3sconf/20171603008Licence: CC BY

e3sconf_espc2017_03008
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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http://urn.fi/URN:NBN:fi:tty-201706201606Licence: CC BY

Cite this

@inproceedings{b314998da6314d7c9e253288f309dc74,

title = "Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE",

abstract = "Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.",

author = "Arto Aho and Riku Isoaho and Antti Tukiainen and Ville Poloj{\"a}rvi and Marianna Raappana and Timo Aho and Mircea Guina",

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language = "English",

series = "E3S Web of Conferences",

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note = "European Space Power Conference ; Conference date: 01-01-2000",

}

Aho, A , Isoaho, R , Tukiainen, A , Polojärvi, V , Raappana, M, Aho, T & Guina, M 2017, Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE. in 11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece., 03008, E3S Web of Conferences, vol. 16, EDP Sciences, European Space Power Conference, 1/01/00. https://doi.org/10.1051/e3sconf/20171603008

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE. / Aho, Arto ; Isoaho, Riku ; Tukiainen, Antti et al.
11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece. EDP Sciences, 2017. 03008 (E3S Web of Conferences; Vol. 16).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

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T1 - Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

AU - Aho, Arto

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AU - Tukiainen, Antti

AU - Polojärvi, Ville

AU - Raappana, Marianna

AU - Aho, Timo

AU - Guina, Mircea

PY - 2017

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N2 - Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

AB - Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

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PB - EDP Sciences

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ER -

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

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