Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

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    Abstract

    Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.
    Original languageEnglish
    Title of host publication11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece
    PublisherEDP Sciences
    DOIs
    Publication statusPublished - 2017
    Publication typeA4 Article in conference proceedings
    EventEuropean Space Power Conference -
    Duration: 1 Jan 2000 → …

    Publication series

    NameE3S Web of Conferences
    Volume16
    ISSN (Electronic)2267-1242

    Conference

    ConferenceEuropean Space Power Conference
    Period1/01/00 → …

    Publication forum classification

    • Publication forum level 1

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