Performance and lifetime of high-power narrow-linewidth 1180 nm GaInNAs DBR-LDs

Jukka Viheriälä; Antti Aho; Heikki Virtanen; Mervi Koskinen; Mircea Guina

doi:10.1109/CLEOE-EQEC.2017.8086374

Abstract

We report the highest power narrow spectrum 1180 nm distributed Bragg reflector (DBR) laser diodes prepared using GaInNAs quantum wells as a gain material. In particular, we demonstrate a CW output power up to 560 mW from Ridge Waveguide (RWG)-DBR laser diodes and up to 2.75W for Tapered DBR-LDs. The demonstration targets applications in second harmonic generation (SHG) for generating high brightness yellow radiation. RWG-DBR LDs are optimal light sources for waveguide SHG-crystals allowing high efficiency coupling to single mode WG embedded in the SHG-crystal. On the other hand, tapered DBR-LDs provide a power level that suitable for bulk SHG-crystals that can withstand more IR-light and alleviate the need for waveguide alignment. To reach the 1180 nm range we have developed high-quality GaInNAs quantum wells embedded in GaAs waveguide, a material system that has been in the past recognized for poor reliability in laser operation. In our case, preliminary lifetime test for GaInNAs RWG-DBR LDs showed no signs of degradation in a room-temperature operation for over 2000hours under high current driving at 1500 mA drive-current.

Original language	English
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2017.8086374
Publication status	Published - 2017
Publication type	Not Eligible
Event	CLEO/Europe-EQEC 2017 - Munich, Germany Duration: 25 Jun 2017 → 29 Jun 2017

Conference

Conference	CLEO/Europe-EQEC 2017
Country/Territory	Germany
City	Munich
Period	25/06/17 → 29/06/17

Keywords

1180nm
1178nm
1154nm
DBR
laser diode
high power
narrow linewidth

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1109/CLEOE-EQEC.2017.8086374

Performance and lifetime of high-power narrow-linewidth 2017
This publication is copyrighted. You may download, display and print it for Your own personal use. Commercial use is prohibited.
Accepted author manuscript, 25.5 KB

http://urn.fi/URN:NBN:fi:tuni-202002122028

Cite this

@conference{062fa58b579d4ea1a4e8284de23f5e21,

title = "Performance and lifetime of high-power narrow-linewidth 1180 nm GaInNAs DBR-LDs",

abstract = "We report the highest power narrow spectrum 1180 nm distributed Bragg reflector (DBR) laser diodes prepared using GaInNAs quantum wells as a gain material. In particular, we demonstrate a CW output power up to 560 mW from Ridge Waveguide (RWG)-DBR laser diodes and up to 2.75W for Tapered DBR-LDs. The demonstration targets applications in second harmonic generation (SHG) for generating high brightness yellow radiation. RWG-DBR LDs are optimal light sources for waveguide SHG-crystals allowing high efficiency coupling to single mode WG embedded in the SHG-crystal. On the other hand, tapered DBR-LDs provide a power level that suitable for bulk SHG-crystals that can withstand more IR-light and alleviate the need for waveguide alignment. To reach the 1180 nm range we have developed high-quality GaInNAs quantum wells embedded in GaAs waveguide, a material system that has been in the past recognized for poor reliability in laser operation. In our case, preliminary lifetime test for GaInNAs RWG-DBR LDs showed no signs of degradation in a room-temperature operation for over 2000hours under high current driving at 1500 mA drive-current. ",

keywords = "1180nm, 1178nm, 1154nm, DBR, laser diode, high power, narrow linewidth",

author = "Jukka Viheri{\"a}l{\"a} and Antti Aho and Heikki Virtanen and Mervi Koskinen and Mircea Guina",

note = "INT={"}Koskinen, Mervi{"}; CLEO/Europe-EQEC 2017 ; Conference date: 25-06-2017 Through 29-06-2017",

year = "2017",

doi = "10.1109/CLEOE-EQEC.2017.8086374",

language = "English",

}

TY - CONF

T1 - Performance and lifetime of high-power narrow-linewidth 1180 nm GaInNAs DBR-LDs

AU - Viheriälä, Jukka

AU - Aho, Antti

AU - Virtanen, Heikki

AU - Koskinen, Mervi

AU - Guina, Mircea

N1 - INT="Koskinen, Mervi"

PY - 2017

Y1 - 2017

N2 - We report the highest power narrow spectrum 1180 nm distributed Bragg reflector (DBR) laser diodes prepared using GaInNAs quantum wells as a gain material. In particular, we demonstrate a CW output power up to 560 mW from Ridge Waveguide (RWG)-DBR laser diodes and up to 2.75W for Tapered DBR-LDs. The demonstration targets applications in second harmonic generation (SHG) for generating high brightness yellow radiation. RWG-DBR LDs are optimal light sources for waveguide SHG-crystals allowing high efficiency coupling to single mode WG embedded in the SHG-crystal. On the other hand, tapered DBR-LDs provide a power level that suitable for bulk SHG-crystals that can withstand more IR-light and alleviate the need for waveguide alignment. To reach the 1180 nm range we have developed high-quality GaInNAs quantum wells embedded in GaAs waveguide, a material system that has been in the past recognized for poor reliability in laser operation. In our case, preliminary lifetime test for GaInNAs RWG-DBR LDs showed no signs of degradation in a room-temperature operation for over 2000hours under high current driving at 1500 mA drive-current.

AB - We report the highest power narrow spectrum 1180 nm distributed Bragg reflector (DBR) laser diodes prepared using GaInNAs quantum wells as a gain material. In particular, we demonstrate a CW output power up to 560 mW from Ridge Waveguide (RWG)-DBR laser diodes and up to 2.75W for Tapered DBR-LDs. The demonstration targets applications in second harmonic generation (SHG) for generating high brightness yellow radiation. RWG-DBR LDs are optimal light sources for waveguide SHG-crystals allowing high efficiency coupling to single mode WG embedded in the SHG-crystal. On the other hand, tapered DBR-LDs provide a power level that suitable for bulk SHG-crystals that can withstand more IR-light and alleviate the need for waveguide alignment. To reach the 1180 nm range we have developed high-quality GaInNAs quantum wells embedded in GaAs waveguide, a material system that has been in the past recognized for poor reliability in laser operation. In our case, preliminary lifetime test for GaInNAs RWG-DBR LDs showed no signs of degradation in a room-temperature operation for over 2000hours under high current driving at 1500 mA drive-current.

KW - 1180nm

KW - 1178nm

KW - 1154nm

KW - DBR

KW - laser diode

KW - high power

KW - narrow linewidth

U2 - 10.1109/CLEOE-EQEC.2017.8086374

DO - 10.1109/CLEOE-EQEC.2017.8086374

M3 - Abstract

T2 - CLEO/Europe-EQEC 2017

Y2 - 25 June 2017 through 29 June 2017

ER -