Photoluminescence of SiSnC alloys grown on (100) Si substrates

N. Wright; A. T. Khan; P. R. Berger; F. J. Guarin; S. S. Iyer

doi:10.1557/proc-533-327

Photoluminescence of SiSnC alloys grown on (100) Si substrates

N. Wright, A. T. Khan, P. R. Berger, F. J. Guarin, S. S. Iyer

Research output: Contribution to journal › Conference article › Scientific › peer-review

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Abstract

The photoluminescence (PL) of SiSnC alloy grown by molecular beam epitaxy on Si (100) substrate is presented. Different epitaxial layers are investigated. The samples are similar in structure, and consisted of a 200 angstroms Si buffer grown on a (100) Si substrate followed by the respective alloy layer, a 4500 angstroms Si_0.955Sn_0.03C_0.015, a 1500 angstroms Si_0.96Sn_0.04 or a 1500 angstroms Si_0.985C_0.015. The layer composition is measured by Rutherford backscattering spectrometry, and confirmed by X-ray diffraction analysis. X-ray diffraction measurements of the layers confirmed that Sn and C are substitutional and the layers are pseudomorphic and coherently strained. The Si_0.955Sn_0.03C_0.015 allow layer is strain compensated. PL spectra of all the layers revealed band edge luminescence as well as a very sharp peak.

Original language	English
Pages (from-to)	327-332
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	533
DOIs	https://doi.org/10.1557/proc-533-327
Publication status	Published - 1998
Externally published	Yes
Publication type	A1 Journal article-refereed
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: 13 Apr 1998 → 17 Apr 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{d3d7aedb103b433c9186d373378b1efe,

title = "Photoluminescence of SiSnC alloys grown on (100) Si substrates",

abstract = "The photoluminescence (PL) of SiSnC alloy grown by molecular beam epitaxy on Si (100) substrate is presented. Different epitaxial layers are investigated. The samples are similar in structure, and consisted of a 200 angstroms Si buffer grown on a (100) Si substrate followed by the respective alloy layer, a 4500 angstroms Si0.955Sn0.03C0.015, a 1500 angstroms Si0.96Sn0.04 or a 1500 angstroms Si0.985C0.015. The layer composition is measured by Rutherford backscattering spectrometry, and confirmed by X-ray diffraction analysis. X-ray diffraction measurements of the layers confirmed that Sn and C are substitutional and the layers are pseudomorphic and coherently strained. The Si0.955Sn0.03C0.015 allow layer is strain compensated. PL spectra of all the layers revealed band edge luminescence as well as a very sharp peak.",

author = "N. Wright and Khan, {A. T.} and Berger, {P. R.} and Guarin, {F. J.} and Iyer, {S. S.}",

year = "1998",

doi = "10.1557/proc-533-327",

language = "English",

volume = "533",

pages = "327--332",

}

TY - JOUR

T1 - Photoluminescence of SiSnC alloys grown on (100) Si substrates

AU - Wright, N.

AU - Khan, A. T.

AU - Berger, P. R.

AU - Guarin, F. J.

AU - Iyer, S. S.

PY - 1998

Y1 - 1998

N2 - The photoluminescence (PL) of SiSnC alloy grown by molecular beam epitaxy on Si (100) substrate is presented. Different epitaxial layers are investigated. The samples are similar in structure, and consisted of a 200 angstroms Si buffer grown on a (100) Si substrate followed by the respective alloy layer, a 4500 angstroms Si0.955Sn0.03C0.015, a 1500 angstroms Si0.96Sn0.04 or a 1500 angstroms Si0.985C0.015. The layer composition is measured by Rutherford backscattering spectrometry, and confirmed by X-ray diffraction analysis. X-ray diffraction measurements of the layers confirmed that Sn and C are substitutional and the layers are pseudomorphic and coherently strained. The Si0.955Sn0.03C0.015 allow layer is strain compensated. PL spectra of all the layers revealed band edge luminescence as well as a very sharp peak.

AB - The photoluminescence (PL) of SiSnC alloy grown by molecular beam epitaxy on Si (100) substrate is presented. Different epitaxial layers are investigated. The samples are similar in structure, and consisted of a 200 angstroms Si buffer grown on a (100) Si substrate followed by the respective alloy layer, a 4500 angstroms Si0.955Sn0.03C0.015, a 1500 angstroms Si0.96Sn0.04 or a 1500 angstroms Si0.985C0.015. The layer composition is measured by Rutherford backscattering spectrometry, and confirmed by X-ray diffraction analysis. X-ray diffraction measurements of the layers confirmed that Sn and C are substitutional and the layers are pseudomorphic and coherently strained. The Si0.955Sn0.03C0.015 allow layer is strain compensated. PL spectra of all the layers revealed band edge luminescence as well as a very sharp peak.

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U2 - 10.1557/proc-533-327

DO - 10.1557/proc-533-327

M3 - Conference article

AN - SCOPUS:0032304564

SN - 0272-9172

VL - 533

SP - 327

EP - 332

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 13 April 1998 through 17 April 1998

ER -

Photoluminescence of SiSnC alloys grown on (100) Si substrates

Abstract

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