pnp Si resonant interband tunnel diode with symmetrical NDR

N. Jin, P. R. Berger, S. L. Rommel, P. E. Thompson, K. P. Hobart

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)


A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The I-V characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (Jp) of 1.5 kA/cm2, while the bottom diode shows a PVCR of 1.51 with Jp of 2.0 kA/cm2.

Original languageEnglish
Pages (from-to)1412-1414
Number of pages3
JournalElectronics Letters
Issue number23
Publication statusPublished - 8 Nov 2001
Externally publishedYes
Publication typeA1 Journal article-refereed

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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