pnp Si resonant interband tunnel diode with symmetrical NDR

N. Jin; P. R. Berger; S. L. Rommel; P. E. Thompson; K. P. Hobart

doi:10.1049/el:20010961

pnp Si resonant interband tunnel diode with symmetrical NDR

N. Jin, P. R. Berger, S. L. Rommel, P. E. Thompson, K. P. Hobart

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The I-V characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (J_p) of 1.5 kA/cm², while the bottom diode shows a PVCR of 1.51 with J_p of 2.0 kA/cm².

Original language	English
Pages (from-to)	1412-1414
Number of pages	3
Journal	Electronics Letters
Volume	37
Issue number	23
DOIs	https://doi.org/10.1049/el:20010961
Publication status	Published - 8 Nov 2001
Externally published	Yes
Publication type	A1 Journal article-refereed

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20010961

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@article{43684d1181a5469ba1fe2d98084b0973,

title = "pnp Si resonant interband tunnel diode with symmetrical NDR",

abstract = "A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The I-V characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (Jp) of 1.5 kA/cm2, while the bottom diode shows a PVCR of 1.51 with Jp of 2.0 kA/cm2.",

author = "N. Jin and Berger, {P. R.} and Rommel, {S. L.} and Thompson, {P. E.} and Hobart, {K. P.}",

year = "2001",

month = nov,

day = "8",

doi = "10.1049/el:20010961",

language = "English",

volume = "37",

pages = "1412--1414",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "23",

}

TY - JOUR

T1 - pnp Si resonant interband tunnel diode with symmetrical NDR

AU - Jin, N.

AU - Berger, P. R.

AU - Rommel, S. L.

AU - Thompson, P. E.

AU - Hobart, K. P.

PY - 2001/11/8

Y1 - 2001/11/8

N2 - A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The I-V characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (Jp) of 1.5 kA/cm2, while the bottom diode shows a PVCR of 1.51 with Jp of 2.0 kA/cm2.

AB - A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The I-V characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (Jp) of 1.5 kA/cm2, while the bottom diode shows a PVCR of 1.51 with Jp of 2.0 kA/cm2.

U2 - 10.1049/el:20010961

DO - 10.1049/el:20010961

M3 - Article

AN - SCOPUS:0035829523

SN - 0013-5194

VL - 37

SP - 1412

EP - 1414

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

pnp Si resonant interband tunnel diode with symmetrical NDR

Abstract

ASJC Scopus subject areas

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