Progress toward atomic layer epitaxy of diamond using radical chemistry

R. Gat, T. I. Hukka, M. P. D'Evelyn

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific

Translated title of the contribution	Progress toward atomic layer epitaxy of diamond using radical chemistry
Original language	English
Title of host publication	Proceedings of the Third International Symposium on Diamond Materials, Electrochemical Society, Pennington, New Jersey, 1993
Pages	516-520
Publication status	Published - 1993
Externally published	Yes
Publication type	B3 Article in conference proceedings
Event	PROCEEDINGS VOLUMES / ELECTROCHEMICAL SOCIETY - Duration: 1 Jan 1900 → …

Conference	PROCEEDINGS VOLUMES / ELECTROCHEMICAL SOCIETY
Period	1/01/00 → …

Publication forum classification

@inproceedings{b1be7abc2d3348bdb2c3264926543186,

title = "Progress toward atomic layer epitaxy of diamond using radical chemistry",

author = "R. Gat and Hukka, {T. I.} and D'Evelyn, {M. P.}",

note = "Contribution: organisation=kem,FACT1=1; PROCEEDINGS VOLUMES / ELECTROCHEMICAL SOCIETY ; Conference date: 01-01-1900",

year = "1993",

language = "English",

pages = "516--520",

booktitle = "Proceedings of the Third International Symposium on Diamond Materials, Electrochemical Society, Pennington, New Jersey, 1993",

}

TY - GEN

T1 - Progress toward atomic layer epitaxy of diamond using radical chemistry

AU - Gat, R.

AU - Hukka, T. I.

AU - D'Evelyn, M. P.

N1 - Contribution: organisation=kem,FACT1=1

PY - 1993

Y1 - 1993

M3 - Conference contribution

SP - 516

EP - 520

BT - Proceedings of the Third International Symposium on Diamond Materials, Electrochemical Society, Pennington, New Jersey, 1993

T2 - PROCEEDINGS VOLUMES / ELECTROCHEMICAL SOCIETY

Y2 - 1 January 1900

ER -