Properties of the SiO2- and SiNx -capped GaAs(100) surfaces of GaInAsN / GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

J. Dahl, Ville Polojärvi, Joel Salmi, Pekka Laukkanen, Mircea Guina

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    Translated title of the contributionProperties of the SiO2- and SiNx -capped GaAs(100) surfaces of GaInAsN / GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence
    Original languageEnglish
    Article number102105
    Pages (from-to)1-3
    Number of pages3
    JournalApplied Physics Letters
    Volume99
    Issue number10
    DOIs
    Publication statusPublished - 2011
    Publication typeA1 Journal article-refereed

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