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Q-switched Nd:YVO4 microchip laser emitting 204 ps pulses at 1.34 µm

  • Jari Nikkinen
  • , Ville-Markus Korpijärvi
  • , Iiro Leino
  • , Antti Härkönen
  • , Mircea Guina

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    We report a pulsed 1.34 µm Nd:YVO4 microchip laser Q-switched with a GaInNAs/GaAs semiconductor saturable absorber mirror. Output power of 24 mW at a repetition rate of 2.3 MHz and pulse duration of 204 ps was achieved, which is to our knowledge, the first demonstration of a 1.34 µm microchip laser utilizing this type of quantum well absorber.
    Original languageEnglish
    Title of host publicationNorthern Optics & Photonics 2015
    Subtitle of host publicationJune 2-4, 2015, Lappeenranta, Finland
    PublisherUniversity of Eastern Finland
    ISBN (Electronic)978-952-61-1751-5
    Publication statusPublished - 2 Jun 2015
    Publication typeA4 Article in conference proceedings
    EventNorthern Optics and Photonics - Lappeenranta, Finland
    Duration: 2 Jun 20154 Jun 2015

    Conference

    ConferenceNorthern Optics and Photonics
    Country/TerritoryFinland
    CityLappeenranta
    Period2/06/154/06/15

    Publication forum classification

    • No publication forum level

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