Quantum-Well Laser Emitting at 1.2 µm-1.3 µm Window Monolithically Integrated on Ge Substrate

Mircea Guina; Riku Isoaho; Jukka Viheriälä; Arto Aho; Antti Aho; Antti Tukiainen

Quantum-Well Laser Emitting at 1.2 µm-1.3 µm Window Monolithically Integrated on Ge Substrate

Research output: Other conference contribution › Abstract › Scientific

Abstract

We report a quantum-well laser diode monolithically integrated
on Ge substrate. The gain is provided by two GaInNAsSb/GaAs
quantum-wells with emission at 1200 nm-1300 nm. The diode
exhibits continuous-wave operation with mW-level output
power at room temperature.

Original language	English
Publication status	Published - 2017
Event	ecoc 2017: European Conference on Optical Communication - Gothenburg, Sweden Duration: 17 Sept 2017 → 21 Sept 2017 Conference number: 43

Conference

Conference	ecoc 2017
Country/Territory	Sweden
City	Gothenburg
Period	17/09/17 → 21/09/17

Keywords

III-V/Ge
photonics integration
GaInNAs
laser diode

ASJC Scopus subject areas

General Physics and Astronomy
Physics and Astronomy (miscellaneous)

Cite this

@conference{84ce3ab35a614a1a8e95d1b0ff62bd67,

title = "Quantum-Well Laser Emitting at 1.2 µm-1.3 µm Window Monolithically Integrated on Ge Substrate",

abstract = "We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1200 nm-1300 nm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.",

keywords = "III-V/Ge, photonics integration, GaInNAs, laser diode",

author = "Mircea Guina and Riku Isoaho and Jukka Viheri{\"a}l{\"a} and Arto Aho and Antti Aho and Antti Tukiainen",

year = "2017",

language = "English",

note = "ecoc 2017 : European Conference on Optical Communication ; Conference date: 17-09-2017 Through 21-09-2017",

}

TY - CONF

T1 - Quantum-Well Laser Emitting at 1.2 µm-1.3 µm Window Monolithically Integrated on Ge Substrate

AU - Guina, Mircea

AU - Isoaho, Riku

AU - Viheriälä, Jukka

AU - Aho, Arto

AU - Aho, Antti

AU - Tukiainen, Antti

N1 - Conference code: 43

PY - 2017

Y1 - 2017

N2 - We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1200 nm-1300 nm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.

AB - We report a quantum-well laser diode monolithically integrated on Ge substrate. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1200 nm-1300 nm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.

KW - III-V/Ge

KW - photonics integration

KW - GaInNAs

KW - laser diode

M3 - Abstract

T2 - ecoc 2017

Y2 - 17 September 2017 through 21 September 2017

ER -

Quantum-Well Laser Emitting at 1.2 µm-1.3 µm Window Monolithically Integrated on Ge Substrate

Abstract

Conference

Keywords

ASJC Scopus subject areas

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Cite this