Raman spectroscopy of GaSb1-xBixalloys with high Bi content

S. Souto, J. Hilska, Y. Galvão Gobato, D. Souza, M. B. Andrade, E. Koivusalo, J. Puustinen, M. Guina

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
2 Downloads (Pure)

Abstract

We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks.

Original languageEnglish
Article number202103
Number of pages5
JournalApplied Physics Letters
Volume116
Issue number20
DOIs
Publication statusPublished - 20 May 2020
Publication typeA1 Journal article-refereed

Publication forum classification

  • Publication forum level 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Raman spectroscopy of GaSb1-xBixalloys with high Bi content'. Together they form a unique fingerprint.

Cite this