Raman spectroscopy of GaSb1-xBixalloys with high Bi content

S. Souto; J. Hilska; Y. Galvão Gobato; D. Souza; M. B. Andrade; E. Koivusalo; J. Puustinen; M. Guina

doi:10.1063/5.0008100

Raman spectroscopy of GaSb_1-xBi_xalloys with high Bi content

S. Souto, J. Hilska, Y. Galvão Gobato, D. Souza, M. B. Andrade, E. Koivusalo, J. Puustinen, M. Guina

Physics

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Abstract

We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks.

Original language	English
Article number	202103
Number of pages	5
Journal	Applied Physics Letters
Volume	116
Issue number	20
DOIs	https://doi.org/10.1063/5.0008100
Publication status	Published - 20 May 2020
Publication type	A1 Journal article-refereed

Publication forum classification

Publication forum level 2

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0008100

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Cite this

@article{23b7b42f576d4e1c99753a89eecdfafa,

title = "Raman spectroscopy of GaSb1-xBixalloys with high Bi content",

abstract = "We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks.",

author = "S. Souto and J. Hilska and {Galv{\~a}o Gobato}, Y. and D. Souza and Andrade, {M. B.} and E. Koivusalo and J. Puustinen and M. Guina",

note = "Funding Information: This work was supported by the Brazilian agencies “Fundac¸{\~a}o de Amparo a Pesquisa do Estado de S{\~a}o Paulo” (FAPESP) (Grant Nos. 16/10668-7 and 14/50513-7) and “Conselho Nacional de Desenvolvimento Cient{\'i}fico e Tecnol{\'o}gico” (CNPq), the ERC AdG Project AMETIST (Grant No. ERC-2015-AdG 695116), and is also part of Academy of Finland Flagship Programme PREIN No. 320168. The authors acknowledge the experimental support received from the Microscopy Center facilities at Tampere University. Publisher Copyright: {\textcopyright} 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2020",

month = may,

day = "20",

doi = "10.1063/5.0008100",

language = "English",

volume = "116",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "20",

}

TY - JOUR

T1 - Raman spectroscopy of GaSb1-xBixalloys with high Bi content

AU - Souto, S.

AU - Hilska, J.

AU - Galvão Gobato, Y.

AU - Souza, D.

AU - Andrade, M. B.

AU - Koivusalo, E.

AU - Puustinen, J.

AU - Guina, M.

N1 - Funding Information: This work was supported by the Brazilian agencies “Fundac¸ão de Amparo a Pesquisa do Estado de São Paulo” (FAPESP) (Grant Nos. 16/10668-7 and 14/50513-7) and “Conselho Nacional de Desenvolvimento Científico e Tecnológico” (CNPq), the ERC AdG Project AMETIST (Grant No. ERC-2015-AdG 695116), and is also part of Academy of Finland Flagship Programme PREIN No. 320168. The authors acknowledge the experimental support received from the Microscopy Center facilities at Tampere University. Publisher Copyright: © 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/5/20

Y1 - 2020/5/20

N2 - We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks.

AB - We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks.

U2 - 10.1063/5.0008100

DO - 10.1063/5.0008100

M3 - Article

AN - SCOPUS:85092570366

SN - 0003-6951

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202103

ER -