We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks.
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)