Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductors

T. S. Rantala; V. Lantto; T. T. Rantala

doi:10.1016/0925-4005(93)85369-L

Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductors

T. S. Rantala, V. Lantto, T. T. Rantala

Research output: Contribution to journal › Article › Scientific › peer-review

32 Citations (Scopus)

Abstract

Rate equation simulatin is used in the present computational approach in order to study the role of different adsorbed oxygen ions (O₂ ^- and O^-) in controlling the height of the Schottky barrier at the surface of SnO₂, a key material in the field of semiconductor gas sensors. Computations are based on the adsorption/desorption model and consider the electron transfer between different oxygen species on the surface and the bulk conduction band. Different values have been tested for both the frequency factors and the activation energies of the rate constants in order to consider the relative population between the O^- and O₂ ^- ions on the surface at different temperatures, the dependence of the height of the surface Schottky barrier on temperature and oxygen partial pressure, and also the response and recovery times of the barrier heights as a consequence of rapid temperature changes. Comparisons of calculated barrier heights with some empirical values are also given at different temperatures and oxygen partial pressures.

Original language	English
Pages (from-to)	234-237
Number of pages	4
Journal	Sensors and Actuators B: Chemical
Volume	13
Issue number	1-3
DOIs	https://doi.org/10.1016/0925-4005(93)85369-L
Publication status	Published - 1993
Externally published	Yes
Publication type	A1 Journal article-refereed

ASJC Scopus subject areas

Analytical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1016/0925-4005(93)85369-L

Cite this

@article{b013c97d5537440fb8c9e9e1c7139045,

title = "Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductors",

abstract = "Rate equation simulatin is used in the present computational approach in order to study the role of different adsorbed oxygen ions (O2 - and O-) in controlling the height of the Schottky barrier at the surface of SnO2, a key material in the field of semiconductor gas sensors. Computations are based on the adsorption/desorption model and consider the electron transfer between different oxygen species on the surface and the bulk conduction band. Different values have been tested for both the frequency factors and the activation energies of the rate constants in order to consider the relative population between the O- and O2 - ions on the surface at different temperatures, the dependence of the height of the surface Schottky barrier on temperature and oxygen partial pressure, and also the response and recovery times of the barrier heights as a consequence of rapid temperature changes. Comparisons of calculated barrier heights with some empirical values are also given at different temperatures and oxygen partial pressures.",

author = "Rantala, {T. S.} and V. Lantto and Rantala, {T. T.}",

year = "1993",

doi = "10.1016/0925-4005(93)85369-L",

language = "English",

volume = "13",

pages = "234--237",

journal = "Sensors and Actuators B: Chemical",

issn = "0925-4005",

publisher = "Elsevier Science",

number = "1-3",

}

TY - JOUR

T1 - Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductors

AU - Rantala, T. S.

AU - Lantto, V.

AU - Rantala, T. T.

PY - 1993

Y1 - 1993

N2 - Rate equation simulatin is used in the present computational approach in order to study the role of different adsorbed oxygen ions (O2 - and O-) in controlling the height of the Schottky barrier at the surface of SnO2, a key material in the field of semiconductor gas sensors. Computations are based on the adsorption/desorption model and consider the electron transfer between different oxygen species on the surface and the bulk conduction band. Different values have been tested for both the frequency factors and the activation energies of the rate constants in order to consider the relative population between the O- and O2 - ions on the surface at different temperatures, the dependence of the height of the surface Schottky barrier on temperature and oxygen partial pressure, and also the response and recovery times of the barrier heights as a consequence of rapid temperature changes. Comparisons of calculated barrier heights with some empirical values are also given at different temperatures and oxygen partial pressures.

AB - Rate equation simulatin is used in the present computational approach in order to study the role of different adsorbed oxygen ions (O2 - and O-) in controlling the height of the Schottky barrier at the surface of SnO2, a key material in the field of semiconductor gas sensors. Computations are based on the adsorption/desorption model and consider the electron transfer between different oxygen species on the surface and the bulk conduction band. Different values have been tested for both the frequency factors and the activation energies of the rate constants in order to consider the relative population between the O- and O2 - ions on the surface at different temperatures, the dependence of the height of the surface Schottky barrier on temperature and oxygen partial pressure, and also the response and recovery times of the barrier heights as a consequence of rapid temperature changes. Comparisons of calculated barrier heights with some empirical values are also given at different temperatures and oxygen partial pressures.

U2 - 10.1016/0925-4005(93)85369-L

DO - 10.1016/0925-4005(93)85369-L

M3 - Article

AN - SCOPUS:0027590715

SN - 0925-4005

VL - 13

SP - 234

EP - 237

JO - Sensors and Actuators B: Chemical

JF - Sensors and Actuators B: Chemical

IS - 1-3

ER -

Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductors

Abstract

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this