Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1-xAs/GaAs system

J. Pamulapati; P. K. Bhattacharya; J. Singh; P. R. Berger; C. W. Snyder; B. G. Orr; R. L. Tober

doi:10.1007/BF02666623

Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the In_xGa_1-xAs/GaAs system

J. Pamulapati, P. K. Bhattacharya, J. Singh, P. R. Berger, C. W. Snyder, B. G. Orr, R. L. Tober

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

We confirm that as the misfit strain in pseudomorphic epitaxial layer increases, surface thermodynamics controlled growth modes can change from a layer-by-layer to a three-dimensional (3-D) island mode. Both in-situ reflection high energy electron diffraction studies and in-situ scanning tunneling microscopy studies are utilized to demonstrate this transition to 3-D growth. This concept allows one to grow GaAs/In_xGa_1-xAs/GaAs heterostructures where the electrons in In_xGa_1-xAs are possibly confined in lower dimensions.

Original language	English
Pages (from-to)	479-483
Number of pages	5
Journal	Journal of Electronic Materials
Volume	25
Issue number	3
DOIs	https://doi.org/10.1007/BF02666623
Publication status	Published - Mar 1996
Publication type	A1 Journal article-refereed

Keywords

InGaAs/GaAs
Reflection high energy electron diffraction (RHEED)
Scanning tunneling microscopy (STM)
Strained layer growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/BF02666623

Cite this

@article{80aaa0a1e8844003be58017b11701555,

title = "Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1-xAs/GaAs system",

abstract = "We confirm that as the misfit strain in pseudomorphic epitaxial layer increases, surface thermodynamics controlled growth modes can change from a layer-by-layer to a three-dimensional (3-D) island mode. Both in-situ reflection high energy electron diffraction studies and in-situ scanning tunneling microscopy studies are utilized to demonstrate this transition to 3-D growth. This concept allows one to grow GaAs/InxGa1-xAs/GaAs heterostructures where the electrons in InxGa1-xAs are possibly confined in lower dimensions.",

keywords = "InGaAs/GaAs, Reflection high energy electron diffraction (RHEED), Scanning tunneling microscopy (STM), Strained layer growth",

author = "J. Pamulapati and Bhattacharya, {P. K.} and J. Singh and Berger, {P. R.} and Snyder, {C. W.} and Orr, {B. G.} and Tober, {R. L.}",

year = "1996",

month = mar,

doi = "10.1007/BF02666623",

language = "English",

volume = "25",

pages = "479--483",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Institute of Electrical and Electronics Engineers",

number = "3",

}

Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the In_xGa_1-xAs/GaAs system. / Pamulapati, J.; Bhattacharya, P. K.; Singh, J.; Berger, P. R.; Snyder, C. W.; Orr, B. G.; Tober, R. L.

In: Journal of Electronic Materials, Vol. 25, No. 3, 03.1996, p. 479-483.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1-xAs/GaAs system

AU - Pamulapati, J.

AU - Bhattacharya, P. K.

AU - Singh, J.

AU - Berger, P. R.

AU - Snyder, C. W.

AU - Orr, B. G.

AU - Tober, R. L.

PY - 1996/3

Y1 - 1996/3

N2 - We confirm that as the misfit strain in pseudomorphic epitaxial layer increases, surface thermodynamics controlled growth modes can change from a layer-by-layer to a three-dimensional (3-D) island mode. Both in-situ reflection high energy electron diffraction studies and in-situ scanning tunneling microscopy studies are utilized to demonstrate this transition to 3-D growth. This concept allows one to grow GaAs/InxGa1-xAs/GaAs heterostructures where the electrons in InxGa1-xAs are possibly confined in lower dimensions.

AB - We confirm that as the misfit strain in pseudomorphic epitaxial layer increases, surface thermodynamics controlled growth modes can change from a layer-by-layer to a three-dimensional (3-D) island mode. Both in-situ reflection high energy electron diffraction studies and in-situ scanning tunneling microscopy studies are utilized to demonstrate this transition to 3-D growth. This concept allows one to grow GaAs/InxGa1-xAs/GaAs heterostructures where the electrons in InxGa1-xAs are possibly confined in lower dimensions.

KW - InGaAs/GaAs

KW - Reflection high energy electron diffraction (RHEED)

KW - Scanning tunneling microscopy (STM)

KW - Strained layer growth

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DO - 10.1007/BF02666623

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AN - SCOPUS:0042240963

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SP - 479

EP - 483

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

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