Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1-xAs/GaAs system

J. Pamulapati, P. K. Bhattacharya, J. Singh, P. R. Berger, C. W. Snyder, B. G. Orr, R. L. Tober

    Research output: Contribution to journalArticleScientificpeer-review

    12 Citations (Scopus)

    Abstract

    We confirm that as the misfit strain in pseudomorphic epitaxial layer increases, surface thermodynamics controlled growth modes can change from a layer-by-layer to a three-dimensional (3-D) island mode. Both in-situ reflection high energy electron diffraction studies and in-situ scanning tunneling microscopy studies are utilized to demonstrate this transition to 3-D growth. This concept allows one to grow GaAs/InxGa1-xAs/GaAs heterostructures where the electrons in InxGa1-xAs are possibly confined in lower dimensions.

    Original languageEnglish
    Pages (from-to)479-483
    Number of pages5
    JournalJournal of Electronic Materials
    Volume25
    Issue number3
    DOIs
    Publication statusPublished - Mar 1996
    Publication typeA1 Journal article-refereed

    Keywords

    • InGaAs/GaAs
    • Reflection high energy electron diffraction (RHEED)
    • Scanning tunneling microscopy (STM)
    • Strained layer growth

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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