Relaxation analysis of tensile-strained GaInP by means of strain-induced wafer curvature

T.V. Hakkarainen, A. Schramm, L. Toikkanen, A. Tukiainen, M. Pessa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific

Translated title of the contribution	Relaxation analysis of tensile-strained GaInP by means of strain-induced wafer curvature
Original language	English
Title of host publication	15th European Molecular Beam Epitaxy Workshop, Zakopane, Poland, 8-11 March, 2009
Pages	2 p
Publication status	Published - 2009
Publication type	B3 Article in conference proceedings

Publication forum classification

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title = "Relaxation analysis of tensile-strained GaInP by means of strain-induced wafer curvature",

author = "T.V. Hakkarainen and A. Schramm and L. Toikkanen and A. Tukiainen and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2009",

language = "English",

pages = "2 p",

booktitle = "15th European Molecular Beam Epitaxy Workshop, Zakopane, Poland, 8-11 March, 2009",

}

TY - GEN

T1 - Relaxation analysis of tensile-strained GaInP by means of strain-induced wafer curvature

AU - Hakkarainen, T.V.

AU - Schramm, A.

AU - Toikkanen, L.

AU - Tukiainen, A.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2009

Y1 - 2009

M3 - Conference contribution

SP - 2 p

BT - 15th European Molecular Beam Epitaxy Workshop, Zakopane, Poland, 8-11 March, 2009

ER -