Removal of strain relaxation induced defects by flushing of InAs quantum dots

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    7 Citations (Scopus)
    Translated title of the contributionRemoval of strain relaxation induced defects by flushing of InAs quantum dots
    Original languageEnglish
    Article number365107
    Pages (from-to)1-5
    Number of pages5
    JournalJournal of Physics D: Applied Physics
    Volume45
    Issue number36
    DOIs
    Publication statusPublished - 2012
    Publication typeA1 Journal article-refereed

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